Synthesis of Micrometer Length Indium Sulfide Nanosheets and Study of Their Dopant Induced Photoresponse Properties

Abstract

Synthesis of various nanostructured semiconductor materials and processing them for different device fabrications has been at the forefront of research for the last two decades. In comparison to spherical nanoparticles, anisotropic materials e.g. nanorods, nanowires, and nanodisks have been widely explored to obtain a better performance of the devices. In addition, it is also well-known that nanomaterials, on doping with suitable impurities, can enhance the device sensitivity and speed. Combining both, we report here the synthesis of micrometer long In2S3 nanosheets and on doping them with Cu(I), we have studied here their photoresponse properties. These nanosheets are synthesized in a high temperature colloidal method following a catalytic thermal decomposition of a single source precursor of In and S. From various TEM, HRTEM, and HAADF images the growth pattern of these sheets is investigated, and the obtained moiré fringes at the overlapped region are discussed. Finally, the comparative study of the device performance has been carried out with introducing different amounts of copper in these nanosheets.

Semiconducting and Plasmonic Copper Phosphide Platelets

“…The simulated MoirØ pattern from the FFT is also been shown in Figure 3 Although MoirØ fringes are very common and are supposed to be obtained at the overlapping regions of two sheets or platelets, we observed here practically the same with several interesting patterns. To our knowledge, the case here is unique among previous reports on MoirØ fringes [28,[36][37][38] and we assume this to be because of the highly crystalline nature of the platelets. It has been observed that these platelets are associated with several important and useful materials properties.…”

Chalcogenide photosensitized titania nanotube arrays

“…It has been reported that In 2 S 3 may substitute highly toxic cadmium sulfide (CdS) in the buffer layer of chalcogenide-type solar cells [26,27]. For these reasons, In 2 S 3 was selected as the buffer layer for CIS-photosensitized TNAs in this work.…”

Some physical investigations on In2S3:Sn sprayed thin film

“…Due to its intrinsic defect structure, b-In 2 S 3 shows interesting electronic [3], optical [1,4], acoustic [5] optoelectronic and semiconductor sensitization [6] properties. In 2 S 3 is one of the potential materials that can be used for many applications.…”

“…In 2 S 3 is one of the potential materials that can be used for many applications. This includes it as a potential substitute of toxic CdS buffer layer in solar cells [7][8][9][10] and has been used in heterojunction in photovoltaic electric generators [10], as a photocatalytic material for hydrogen production [11], in biological imaging sensors [12], as a photodetector [13], a photocatalytic material for the degradation of dyes [14][15][16][17], in photoelectrochemical solar cells [18] and water splitting [19]. This is mainly due to its chemical stability, wide energy band gap, and controllable electrical properties [20].…”