Synthesis of large-area uniform MoS
                    <sub>2</sub>
                    films by substrate-moving atmospheric pressure chemical vapor deposition: from monolayer to multilayer

He, Tianying; Li, Yongjun; Zhou, Zhifei; Cheng, Zhigang; Qiao, Liang; Lan, Changyong; Yin, Yi; Li, Chun; Liu, Yong

doi:10.1088/2053-1583/ab0760

Cited by 38 publications

(37 citation statements)

References 56 publications

(72 reference statements)

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“…In addition to large-grain continuous film, layer-controlled growth of bilayer and multilayer are also attractive because of the better electrical performance of few-layer MoS 2 36 – 39 . SCVLS can also control the layer number of MoS 2 with its special growth mechanism we proposed.…”

Section: Resultsmentioning

confidence: 99%

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Chang

Tseng

et al. 2020

Nat Commun

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Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS 2 films. An intermediate liquid phase-Na 2 Mo 2 O 7 is formed through a eutectic reaction of MoO 3 and NaF, followed by being sulfurized into MoS 2 . The as-formed MoS 2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm 2 V −1 s −1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 10 8 ) across a 1.5 cm × 1.5 cm region.

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Section: Resultsmentioning

confidence: 99%

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Chang

Tseng

et al. 2020

Nat Commun

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“…As a result, type‐IV scheme is proposed, where the W precursor and S precursor are independently introduced into the chamber without any mixing before reaching the substrate. [ 115–118 ]…”

Section: Synthesismentioning

confidence: 99%

2D WS₂: From Vapor Phase Synthesis to Device Applications

Lan

et al. 2020

Adv Elect Materials

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The discovery of graphene has triggered the research on 2D layer structured materials. Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are widely considered to be the most promising ones due to their excellent electrical and optoelectronic characteristics. Tungsten disulfide (WS2) is a kind of such TMDs with fascinating properties, such as the high carrier mobility, appropriate band gap, strong light–matter interaction with the large light absorption coefficient, very large exciton binding energy, large spin splitting, and polarized light emission. All these interesting properties can make the 2D WS2 being highly favorable for applications in memristors, light‐emitting devices, optical modulators, and many others. Here, the comprehensive review on the properties, vapor phase synthesis, electronic and optoelectronic applications of 2D WS2 is presented. This review does not only serve as a design guideline to elevate the material quality of 2D WS2 films via enhanced synthesis approaches, but also provides valuable insights to various strategies to improve their device performances. With the fast development of wafer‐scale synthesis methods and novel device structures, 2D WS2 can undoubtedly be a rising star for the next‐generation devices in the near future.

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“…It is also challenging to obtain monolayer crystal with a large size. CVD has been widely used in controllable syntheses of various 2D materials like MoS 2 and WS 2 . Therefore, transferring CVD grown to patterned substrates is a feasible way to fabricate freely suspended samples .…”

Section: Nanoindentation Of Freely Suspended 2d Materialsmentioning

confidence: 99%

Two‐dimensional materials: From mechanical properties to flexible mechanical sensors

Jiang

Zheng

Liu

et al. 2019

InfoMat

210

119

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Two‐dimensional (2D) materials have great potential in the fields of flexible electronics and photoelectronic devices due to their unique properties derived by special structures. The study of the mechanical properties of 2D materials plays an important role in next‐generation flexible mechanical electronic device applications. Unfortunately, traditional experiment models and measurement methods are not suitable for 2D materials due to their atomically ultrathin thickness, which limits both the theoretical research and practical value of the 2D materials. In this review, we briefly summarize the characterization of mechanical properties of 2D materials by in situ probe nanoindentation experiments, and discuss the effect of thickness, grain boundary, and interlayer interactions. We introduce the strain‐induced effect on electrical properties and optical properties of 2D materials. Then, we generalize the mechanical sensors based on various 2D materials and their future potential applications in flexible and wearable electronic devices. Finally, we discuss the state of the art for the mechanical properties of 2D materials and their opportunities and challenges in both basic research and practical applications.

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Synthesis of large-area uniform MoS ₂ films by substrate-moving atmospheric pressure chemical vapor deposition: from monolayer to multilayer

Cited by 38 publications

References 56 publications

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

2D WS₂: From Vapor Phase Synthesis to Device Applications

Two‐dimensional materials: From mechanical properties to flexible mechanical sensors

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Synthesis of large-area uniform MoS 2 films by substrate-moving atmospheric pressure chemical vapor deposition: from monolayer to multilayer

Cited by 38 publications

References 56 publications

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

2D WS2: From Vapor Phase Synthesis to Device Applications

Two‐dimensional materials: From mechanical properties to flexible mechanical sensors

Contact Info

Product

Resources

About

Synthesis of large-area uniform MoS ₂ films by substrate-moving atmospheric pressure chemical vapor deposition: from monolayer to multilayer

2D WS₂: From Vapor Phase Synthesis to Device Applications