Graphdiyne
is a new two-dimensional carbon allotrope with many
attractive properties and has been widely used in various applications.
However, the synthesis of large-area, high-quality, and ultrathin
(especially monolayer) graphdiyne and its analogues remains a challenge,
hindering its application in optoelectronic devices. Here, a wafer-scale
monolayer pyrenyl graphdiyne (Pyr-GDY) film is obtained on hexagonal
boron nitride (hBN) via a van der Waals epitaxial strategy, and top-floating-gated
multibit nonvolatile optoelectronic memory based on Pyr-GDY/hBN/graphene
is constructed, using Pyr-GDY as a photoresponsive top-floating gate.
Benefiting from the excellent charge trapping capability and strong
absorption of the graphdiyne film, as well as the top-floating-gated
structure and the ultrathin hBN film used in the device, the optoelectronic
memory exhibits high storage performance and robust reliability. A
huge difference in the current between the programmed and erased states
(>26 μA μm–1 at V
ds = 0.1 V) and a prolonged retention time (>105 s) enable the device to achieve multibit storage, for which
eight
and nine distinct storage levels (3-bit) are obtained by applying
periodic gate voltages and optical pulses in the programming and erasing
processes, respectively. This work provides an important step toward
realizing versatile graphdiyne-based optoelectronic devices in the
future.