Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae‐Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, M. S.; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

doi:10.1038/ncomms9662

Cited by 429 publications

(318 citation statements)

References 65 publications

(97 reference statements)

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“…Generally, a precipitation-driven growth is expected to be strongly affected by the change in cooling rate, while a surface-mediated growth would be minimally affected. 35,36 In our case, Figure 3c shows that the film thickness, uniformity, and crystallinity were nearly identical for both fast and slow cooling, which indicates that a surface-mediated growth was more likely. This is presumably attributed to the low dissolution rate of other reactants into the Ni(111) facet owing to its low surface energy.…”

Section: Effect Of Growth Parametersmentioning

confidence: 52%

Centimeter-sized epitaxial h-BN films

Tchoe

et al. 2016

NPG Asia Mater

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We report the growth and transfer of centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films using Ni(111) single-crystal substrates. The h-BN films were heteroepitaxially grown on 10 × 10 mm 2 or 20 × 20 mm 2 Ni(111) substrates using atmospheric pressure chemical vapor deposition with a single ammonia-borane precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-used. A careful analysis of the growth parameters revealed that the crystallinity and area coverage of the h-BN films were mostly sensitive to the sublimation temperature of the ammonia-borane source. Moreover, various physical characterizations confirmed that the grown films exhibited the typical characteristics of hexagonal boron nitride layers over the entire area. Furthermore, the heteroepitaxial relationship between h-BN and Ni(111) and the overall crystallinity of the film were thoroughly investigated using a synchrotron radiation X-ray diffraction analysis including θ-2θ scans, grazing incident diffraction, and reciprocal space mapping. The crystallinity at the microscopic scale was further investigated using transmission electron microscopy (TEM)-based techniques, including selective area electron diffraction pattern mapping, electron back-scattered diffraction, and high-resolution TEM.

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Section: Effect Of Growth Parametersmentioning

confidence: 52%

Centimeter-sized epitaxial h-BN films

Tchoe

et al. 2016

NPG Asia Mater

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“…7 Among all the 2D materials, few studies on single-layer h-BN exist 8,9 despite the early attempts to exfoliate it 10 and the welldeveloped synthesis techniques. [11][12][13][14][15][16][17] The reason for its difficult exfoliation to a monolayer thickness is unclear, possibly being its AA′ stacking, its slightly-ionic bonds or flatness that causes adhesion between h-BN layers and other surfaces stronger than other 2D materials. [18][19][20][21] Moreover, h-BN surfaces are hydrophillic in nature, but after being exposed to air they get covered by an hydrophobic layer of hydrocarbons as reported in h-BN nanotubes 22 and graphene.…”

Section: Introductionmentioning

confidence: 99%

Mechanical characterization and cleaning of CVD single-layer h-BN resonators

et al. 2017

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Hexagonal boron nitride is a 2D material whose single-layer allotrope has not been intensively studied despite being the substrate for graphene electronics. Its transparency and stronger interlayer adhesion with respect to graphene makes it difficult to work with, and few applications have been proposed. We have developed a transfer technique for this extra-adhesive material that does not require its visual localization, and fabricated mechanical resonators made out of chemical vapor-deposited single-layer hexagonal boron nitride. The suspended material was initially contaminated with polymer residues from the transfer, and the devices showed an unexpected tensioning when cooling them to 3 K. After cleaning in harsh environments with air at 450°C and ozone, the temperature dependence changed with f 0 Q products reaching 2 × 10 10 Hz at room temperature. This work paves the way to the realization of highly sensitive mechanical systems based on hexagonal boron nitride, which could be used as an alternative material to SiN for optomechanics experiments at room temperature.

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“…[7][8][9][10] It is evident that there are common problems with impurities, and the presence of wrinkles and grain boundaries and the non-uniform thickness, which largely originate from the high nucleation density. 15 However, the out-of-plane EBD has been measured under different environmental conditions and by various electrode structures, such as the crossed electrode structure, [6][7][8][9][10] conductive atomic-force microscopy (C-AFM) 3,5,11 and probing systems. 12 To fairly compare the film quality, common conditions to evaluate the out-ofplane EBD must be maintained.…”

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confidence: 99%

Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

Hattori

Taniguchi

Watanabe

et al. 2016

Applied Physics Letters

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Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the most important methods to elucidate the insulating quality of h-BN. In this work, the EBD of high quality exfoliated singlecrystal h-BN was investigated using three different electrode structures under different environmental conditions to determine the ideal electrode structure and environment for EBD measurement. A systematic investigation revealed that EBD is not sensitive to contact force or electrode area but strongly depends on the relative humidity during measurement. Once the measurement environment is properly managed, it was found that the EBD values are consistent within experimental error regardless of the electrode structure, which enables the evaluation of the crystallinity of synthesized h-BN at the microscopic and macroscopic level by utilizing the three different electrode structures properly for different purposes.Following the many advances in the science and application of graphene and other two-dimensional (2D) materials, van der Waals (vdW) heterostructure devices formed by stacking atomically thin layered 2D crystals have attracted significant interest because of their fascinating electrical, optical and mechanical properties. The atoms connect to each other in a unit layer with strong covalent bonds, while each layer is stabilized by weak vdW forces, which enables a wide variety of stacking without the limitation of lattice mismatch at the interface.1 Hexagonal boron nitride (h-BN) with its wide band gap (5.2 -5.9 eV 2 ) has been commonly used as an ideal insulating material in vdW heterostructure devices. Because insulating properties are important in electrical device applications, especially for gate insulators in field-effect transistors, fundamental research on the electrical breakdown strength (EBD) in the out-of-plane direction has been conducted using small flakes that were mechanically exfoliated from high quality single crystals, and the EBD has been reported as ~10 -12 MV/cm. [3][4][5][6] Recently, the in-plane EBD has also been determined to be ~3 MV/cm, 4 suggesting strong anisotropy in EBD.For practical applications, the large-area synthesis of h-BN has been intensively studied using various methods.7-14 However, the out-of-plane EBD values for scalable h-BN are largely scattered and limited to ~4 MV/cm, which is lower than that of the exfoliated sample.7-10 It is evident that there are common problems with impurities, and the presence of wrinkles and grain boundaries and the non-uniform thickness, which largely originate from the high nucleation density. 15 However, the out-of-plane EBD has been measured under different environmental conditions and by various electrode structures, such as the crossed electrode structure, 6-10 conductive atomic-force microscopy (C-AFM) 3, 5, 11 and probing systems. 12 To fairly compare the film quality, com...

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Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Cited by 429 publications

References 65 publications

Centimeter-sized epitaxial h-BN films

Centimeter-sized epitaxial h-BN films

Mechanical characterization and cleaning of CVD single-layer h-BN resonators

Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

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