Synthesis of large-area 2D WS<sub>2</sub> films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

Zhao, Zhijie; Wu, Di; Guo, Jiawen; Wu, Enping; Cheng, Jung An; Shi, Zhifeng; Tian, Yongtao; Li, Xinjian

doi:10.1039/c9tc03866c

Cited by 54 publications

(33 citation statements)

References 42 publications

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“…In addition, the integration of 2DMs/layered materials with 3D bulks is of high compatibility with the currently mature planar microfabrication process, providing a broad avenue for future large‐scale production and application. [ 20 ]…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

et al. 2021

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A self‐powered, high‐performance Ti3C2Tx MXene/GaN van der Waals heterojunction (vdWH)‐based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky junction depth that is larger than the UV absorption depth to sufficiently separate the photoinduced electron/hole pairs, boosting the peak internal quantum efficiency over the unity and the external quantum efficiency over 99% under weak UV light without bias. The proposed Ti3C2Tx/GaN vdWH UV photodiode demonstrates pronounced photoelectric performances working in self‐powered mode, including a large responsivity (284 mA W−1), a high specific detectivity (7.06 × 1013 Jones), and fast response speed (rise/decay time of 7.55 µs/1.67 ms). Furthermore, the remarkable photovoltaic behavior leads to an impressive power conversion efficiency of 7.33% under 355 nm UV light illumination. Additionally, this work presents an easy‐processing spray‐deposition route for the fabrication of large‐area UV photodiode arrays that exhibit highly uniform cell‐to‐cell performance. The MXene/GaN photodiode arrays with high‐efficiency and self‐powered ability show high potential for many applications, such as energy‐saving communication, imaging, and sensing networks.

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Section: Introductionmentioning

confidence: 99%

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

et al. 2021

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“…The value of α, obtained by fitting the curve of Iph versus P in Fig. 4(a), is related to the process of carrier capture, recombination and transfer [65,66]. The sublinear relation between Iph and P suggests the presence of the photogating effect in the device further [61].…”

Section: Device Characterizationmentioning

confidence: 98%

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Li¹,

Zhu²,

Du³

et al. 2021

Preprint

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Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition (CVD) approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 x 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is adverse to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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“…This section presents achievement of the large-area highquality TMDCs crystals readily available to be incorporated into practical industrial applications. Many of these methods investigate the growth or isolation of single TMDCs; however, further, development is needed to produce heterojunctions and Janus structures in large-scale as both of these two types of structures are of great interest for high-performance electronic and optical applications [88][89][90]. Enlarging the overlapping areas for these structures augments their performances by providing larger effective areas.…”

Section: Tmdcsmentioning

confidence: 99%

Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

et al. 2020

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HIGHLIGHTS • Two-dimensional materials including TMDCs, hBN, graphene, non-layered compounds, black phosphorous, Xenes and other emerging materials with large lateral dimensions exceeding a hundred micrometres are summarised detailing their synthetic strategies. • Crystal quality optimisations and defect engineering are discussed for large-area two-dimensional materials synthesis. • Electronics and optoelectronics applications enabled by large-area two-dimensional materials are explored. .

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Synthesis of large-area 2D WS₂ films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

Abstract: High-performance self-powered ultraviolet (UV) photodetector based on a WS2/GaN heterojunction was demonstrated, which exhibits excellent UV photoresponse properties. Significantly, this photodetector has exhibited excellent UV imaging capability.

Cited by 54 publications

References 42 publications

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

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Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

Abstract: High-performance self-powered ultraviolet (UV) photodetector based on a WS2/GaN heterojunction was demonstrated, which exhibits excellent UV photoresponse properties. Significantly, this photodetector has exhibited excellent UV imaging capability.

Cited by 54 publications

References 42 publications

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

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Synthesis of large-area 2D WS₂ films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications