Synthesis of InP semiconductor nanowires containing stacking faults structure

Research on InP nanowires and the effect of different metal electrodes on their photoelectric properties

“…After multiple value measurements to calculate the average, the fringe spacing of InP nanowires is 0.342nm, which matches the (111) crystal plane spacing of sphalerite InP, indicating that the growth direction of InP nanowires is mostly <111> direction. It is consistent with the reported growth direction of most sphalerite InP nanowires[9]. Fig.5(c) shows the electron diffraction spectrum of the nanowire, and the diffraction spots are neatly arranged to verify the highly single crystal structure of the nanowire.…”

(Ga,In)P nanowires grown without intentional catalyst

“…Our nanowire growth technique is a MOCVD/CVD vapor transport method based on the transport of the organometallic triethylgallium (ðC 2 H 5 Þ 3 Ga or TEGa) in the gas phase which is carried by N 2 gas to the Si substrate. The TEGa reacts with the InP vapor pressure from the powder providing the (Ga,In)P nanowire growth [16,17]. The nanowires were characterized through scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL).…”