Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition

Chong, Su Kong; Goh, Boon Tong; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

doi:10.1016/j.matlet.2011.04.100

Cited by 25 publications

(15 citation statements)

References 21 publications

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“…Generally, both the values of r and the aspect ratio of the NWs increase with an increase in T f . The r value of the NWs reached a maximum (1.4 AE 0.1 mm À2 ) at T f of 1700 C and then decreased slightly to 1.2 AE 0.1 mm À2 with increase in T f to 1800 C. Meanwhile, an abrupt increase in aspect ratio of NWs from 6 AE 1 to 10 AE 2 was observed when T f increased from 1400 to 1500 C. This was followed by an almost constant increase in aspect ratio from 10 AE 2 to 18 AE 2 for T f increased from 1500 to 1800 C. In catalyst possessed a cone-shape due to the sheath voltage within the H 2 plasma, which creates a great potential to polarize the In catalyst [14]. Depositing at T f of 1400 C leads to the formation of worm-like structures and larger size conical structures with the same shape as the In catalyst.…”

Section: Morphology Studymentioning

confidence: 97%

“…It has an advantage as catalyst rather than gold for low temperature catalytic growth due to its low melting point (w157 C). In showed its ability to suit to a variety of deposition techniques including magnetron sputtering [29], ebeam evaporation [30], PECVD [31,32] and HWCVD [14] inpreparation of SiNWs. An initiation of vapor-liquid-solid (VLS) growth of SiNWs at substrate temperature as low as 240 C has been achieved using In catalyst and PECVD [32].However, the surface oxidation of the In catalyst could reduce its catalytic effect.…”

Section: Introductionmentioning

confidence: 99%

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Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Chong

Goh

Dee

et al. 2012

Materials Chemistry and Physics

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Section: Morphology Studymentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Chong

Goh

Dee

et al. 2012

Materials Chemistry and Physics

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“…In this work, the Si-based heterostructure nanowires were grown by HWCVD at different filament temperatures. HWCVD is a preferred technique for the fabrication of Si-based nanowires due to its lower production costs and large-area deposition [16, 17]. Moreover, HWCVD can generate high densities of growth precursors (SiH 3 and CH 3 ) through the use of high-temperature tungsten filaments as catalyzers.…”

Section: Introductionmentioning

confidence: 99%

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

2015

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Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature Tf from 1150 to 1850 °C. At a Tf of 1450 °C, the heterostructure nanowires were formed by crystalline NiSi and crystalline Si that were attributed to the core and shell of the nanowires, respectively. The morphology of the nanowires showed significant changes with the increase in the filament temperature to 1850 °C. Moreover, the effect of hydrogen heat transfer from the filament temperature demonstrated significant phase changes from NiSi to Ni2Si with increase in the filament temperature. The increased filament temperature also enhanced reactions in the gas phase thus generating more SiC clusters and consequently formed the NiSi/SiC heterostructure core-shell nanowires at Tf of 1850 °C. This paper discusses the role of filament temperatures on the growth and constituted phase change of the nanowires as well as their electrical characteristics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0980-6) contains supplementary material, which is available to authorized users.

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“…Silane gas diluted in hydrogen (H 2 ) gas in a ratio of 1:20 (5:100 sccm) was used as the Si source for the growth of Si NWs. The details of the deposition process and parameters have been previously described [31,34-37]. The as-grown Si NWs were first coated with a layer of In seeds using the same system.…”

Section: Methodsmentioning

confidence: 99%

“…Tapered Si NW arrays were first synthesized by following a vapor-liquid-solid (VLS) mechanism using In catalyst and a hot-wire chemical vapor deposition [31]. In seeds were then coated on the as-grown Si NWs using the same system.…”

Section: Introductionmentioning

confidence: 99%

Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

2013

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Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.

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Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition

Cited by 25 publications

References 21 publications

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

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