2018
DOI: 10.1016/j.matlet.2017.08.130
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Synthesis of In2S3 thin films directly onto conductive substrates via PVP-assisted microwave irradiation method

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Cited by 13 publications
(4 citation statements)
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“…The diffraction peaks at 2 θ = 27.4°, 33.2°, 43.6° and 47.7° matched with (109), (0012), (1015) and (2212) crystal planes of tetragonal β-In 2 S 3 ( a = b = 7.619 A, c = 32.329 A, JCPDS PCPDFWIN #25-0390), respectively. 7,19 With the reaction time prolonging, the full-width half maximum (FWHM) of (2212) peak decreased (FWHM = 2.5°, 2.2° and 1.5° for In 2 S 3 -5, In 2 S 3 -10, and In 2 S 3 -15, respectively), implying that the average size of In 2 S 3 increased. Additionally, the appearance of the sharper peaks in large-sized In 2 S 3 indicated better crystallinity of the products.…”
Section: Resultsmentioning
confidence: 99%
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“…The diffraction peaks at 2 θ = 27.4°, 33.2°, 43.6° and 47.7° matched with (109), (0012), (1015) and (2212) crystal planes of tetragonal β-In 2 S 3 ( a = b = 7.619 A, c = 32.329 A, JCPDS PCPDFWIN #25-0390), respectively. 7,19 With the reaction time prolonging, the full-width half maximum (FWHM) of (2212) peak decreased (FWHM = 2.5°, 2.2° and 1.5° for In 2 S 3 -5, In 2 S 3 -10, and In 2 S 3 -15, respectively), implying that the average size of In 2 S 3 increased. Additionally, the appearance of the sharper peaks in large-sized In 2 S 3 indicated better crystallinity of the products.…”
Section: Resultsmentioning
confidence: 99%
“…Aer more and more nanoakes were formed, they tended to aggregate into hierarchical clusters as the microwave reaction promoted to three-dimensional growth of the products. 19 3.2 Characterization 3.2.1 Morphologies, structures, and composition. Fig.…”
Section: Inuence Of Synthetic Condition On the Morphology Of In 2 Smentioning
confidence: 99%
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