Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection

Ho, Ching‐Hwa; Lin, Min-Han; Wang, Yiping; Huang, Y. S.

doi:10.1016/j.sna.2016.05.003

Cited by 53 publications

(30 citation statements)

References 34 publications

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“…This material is so called “defect semiconductor” because it has 1/3 of Indium vacancies (V In ) acceptor as reported by P. Pistor et al C. H. Ho reported β‐In 2 S 3 structure with sulfur vacancies (V S ), indium vacancies (V In ) as acceptor, indium interstitial (In i ) as donor, and oxygen in sulfur vacancy (O Vs ). These defects were related with red emission (1.82 eV) for transitions between donors (V S ) and acceptors (V In ), green emission (2.29 eV) for transitions between (In i ) donors to (O Vs ) as acceptor, and the third band due to complex compounds . Figure a shows PL results for In 2 S 3 sample deposited in an open system.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Gutiérrez

Albor-Aguilera

Hernandez-Vasquez

et al. 2017

Physica Status Solidi (a)

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In 2 S 3 thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In 2 S 3 as "standard buffer layer" in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In 2 S 3 physical properties is analyzed. Stable tetragonal β-In 2 S 3 phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10 2 Ω cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In 2 S 3 thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500 nm).

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Section: Resultsmentioning

confidence: 99%

Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Gutiérrez

Albor-Aguilera

Hernandez-Vasquez

et al. 2017

Physica Status Solidi (a)

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“…[ 25,26 ] α‐Ga 2 S 3 possesses a wide bandgap of ≈3.4 eV and has excellent optical absorption properties, [ 24,27 ] giving it great potential for optical and optoelectronic applications, e.g., UV sensor and photovoltaic cell devices. [ 28 ] It has been also revealed that Ga 2 S 3 has a large second‐harmonic generation efficiency, which is ideally desired for nonlinear optical applications. [ 25 ] Moreover, the low‐cost, non‐toxic, and environmentally friendly characteristics of Ga 2 S 3 should be emphasized as well.…”

Section: Introductionmentioning

confidence: 99%

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

Zheng

Tang

Wang

et al. 2020

Adv Funct Materials

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Following the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D α‐Ga2S3 as an important member of group IIIA–VIA semiconductors has outstanding optoelectronic properties. However, the controllable large‐size synthesis of ultrathin α‐Ga2S3 nanosheets still remains a huge challenge. In this paper, a large‐size ultrathin nanosheets of hexagonal Ga2S3 is prepared via an improved chemical vapor deposition method. High‐performance photodetectors based on the ultrathin Ga2S3 nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W−1/1.4 × 1012 Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga2S3 nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next‐generation nanoscale smart optoelectronics.

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“…Indium sulfide (In 2 S 3 ) QDs, which belong to the group III–VI semiconductor materials [5], have many unique optoelectrical, thermal, and mechanical properties, which are suitable for numerous potential applications. For example, sulfide nanomaterials have experienced rapid development for use in solar cells [6], photodetectors [7, 8], biological imaging [9], and photocatalytic degradation [10]. There are various ways of preparing sulfide QDs, and they can be divided into two main categories, namely, ‘top-down’ and ‘bottom-up’ [11].…”

Section: Introductionmentioning

confidence: 99%

In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application

Tang

Zhao

et al. 2019

Nanoscale Res Lett

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Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In 2 S 3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In 2 S 3 QDs with excellent crystal quality. The properties of the as-prepared In 2 S 3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 13 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.

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Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection

Cited by 53 publications

References 34 publications

Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application

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Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection

Cited by 53 publications

References 34 publications

Structural and Optoelectronic Properties of β‐In2S3 Thin Films to be Applied on Cadmium Reduced Solar Cells

Structural and Optoelectronic Properties of β‐In2S3 Thin Films to be Applied on Cadmium Reduced Solar Cells

Large‐Size Ultrathin α‐Ga2S3 Nanosheets toward High‐Performance Photodetection

In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application

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Product

Resources

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Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Structural and Optoelectronic Properties of β‐In₂S₃ Thin Films to be Applied on Cadmium Reduced Solar Cells

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection