Synthesis of In₂S₃ and In₆S₇ Microcolumns and Nanowires by a Vapor‐Solid Method

Abstract

Indium sulfide (In2S3) is a promising candidate for the replacement of CdS buffer layers in solar cell devices, while hexaindium heptasulfide (In6S7) presents interesting properties for its use as absorber material. In this work the fabrication of In2S3 microcolumns as well as novel In6S7 nanowires with diameters of about 70–120 nm is reported. The structures are grown following a thermal evaporation‐deposition method at temperatures between 900 and 1000 °C. Control of the phase and morphology of the structures is achieved through both the evaporation and deposition temperatures, which can be tuned separately. Energy dispersive spectroscopy shows no traces of residual oxygen, while X‐ray photoelectron spectroscopy indicates the presence of small amounts of oxygen incorporated at the surface of the structures. The In6S7 nanowires are found to be degenerated n‐type semiconductors, with the Fermi level above the conduction band minimum. The origin of this n‐type degeneracy is discussed in terms of S vacancies.

Effect of heat treatments on the electronic properties of indium sulfide films

“…The properties of In-S nanowires and columnar structures are also of interest [6]. Several synthesis methods such as chemical synthesis, ionic layer adsorption and reaction method, and co-evaporation method have been studied to obtain high-quality In-S [6][7][8][9][10][11][12]. Despite the increasing importance of materials, the relation between defect absorption and carrier generation in In-S remains unclear.…”

Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs

“…In 2 S 3 nanocrystals with high aspect ratio were grown in the form columnar microcrystals by thermal evaporation without the use of a catalyst . Finally, In 2 Se 3 NWs were synthesized by the Au-assisted VLS mechanism by several groups. − High quality nanostructures were obtained and investigated as possible Li-storage materials because of the intrinsic presence of structural vacancies and as a potential material system for high-performance visible-light photodetectors and field emitters . Similar structural vacancies are also intrinsically present in Ga 2 Se 3 .…”