Synthesis of IGZO ink and study of ink-jet printed IGZO thin films with different Ga concentrations

Shen, Yuxia; Liu, Z.; K., W.; Chen, T. P.; Zhang, H. Y.

doi:10.1016/j.sse.2017.10.006

Cited by 6 publications

(8 citation statements)

References 11 publications

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“…The rapid weight loss with the first endothermic reaction is attributed to the evaporation of organic and inorganic residuals along with HCl, HNO 3 , CH 3 COOH, NH 3 , CH 4 , CO 2 , CH 2 CO, and H 2 O. Herein, the IGZO precursors such as InCl 3 , Ga(NO 3 ) 3 ∙6H 2 O, and Zn(CH 3 COO) 2 ∙2H 2 O form into metal hydroxides as shown in the following chemical reactions (1–5). [ 24–29 ]

\begin{array}{*{20}{c}}{InC{l_3} + Ga{{\left( {N{O_3}} \right)}_3} \cdot 6{{\rm{H}}_2}{\rm{O}} + Zn{{\left( {C{H_3}COO} \right)}_2} \cdot 2{{\rm{H}}_2}{\rm{O}}}\\{\mathop \Leftrightarrow \limits^\Delta In{{\left( {OH} \right)}_3} + Ga{{\left( {OH} \right)}_3} + Zn{{\left( {OH} \right)}_2} + 3HCl\left( \uparrow \right)}\\{ + \;3HN{{\rm{O}}_{3}}\left( \uparrow \right) + 2{\rm{C}}{{\rm{H}}_3}COOH}\end{array}

…”

Section: Resultsmentioning

confidence: 99%

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

Bae

Ali

Jang

2022

Adv Materials Technologies

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This CBM mainly consists of cation s-orbitals that are large enough to overlap the adjacent cations. Therefore, the effective mass of electrons is relatively small and less affected by the disorder of non-directional s-orbitals than the directional sp3 orbital in Si, allowing the AOS to make relatively high mobility even in the amorphous phase. [3,4] The fabrication process of AOS is not as complicated as that of low-temperature poly-Si (LTPS). [5] AOS can be fabricated by both vacuum and low-cost solution processes. The conventional AOS processing methods are sputtering, atomic layer deposition (ALD), metal-organic chemical vapor deposition (MOCVD), spin coating, ink-jet printing, spray pyrolysis, and so on. [6][7][8][9][10] Among these methods, spray pyrolysis is one of the most promising technology due to its simplicity, cost-efficiency, and vacuum-free deposition capability. Compared to the other solution methods, spray pyrolysis can produce uniform films over large areas. [11] However, the main challenges of the spray pyrolysis technique are to make dense and bubbles free films at low temperature. The rapid evaporation of the solvent during spray coating often results in bubbles or coffee rings throughout the film. In previous work, we developed high-density and bubbles-free metal oxide films using precursor solution modification. [12a] The zinc (Zn) based thin-films grown at 350 °C have shown high density with bubbles-free smooth surface morphology. [12a] These materials are applied to obtain high-performance zinc oxide (ZnO) based TFTs, exhibiting mobility over 70 cm 2 V −1 s −1 and excellent stability. [13][14][15][16][17] The device structure is one of the crucial technology to fabricate TFTs backplane for an active-matrix organic light-emitting diode (AMOLED) display. The self-aligned (SA) coplanar TFTs offer a large area, fast frame rate, and high-resolution AMOLED display compared to the bottom-gated (BG) structure. Therefore, the SA coplanar TFTs are being used for the manufacturing of AMOLED television (TV). To the best of our knowledge, there is only one report on SA coplanar TFT with a metal oxide semiconductor (MOS) using spray pyrolysis. [18] Most reports on spray-pyrolyzed MOS devices have focused on the BG TFTs with the inverted staggered structure such as etch stopper (ES) or back channel etched (BCE). [19] This structure has high parasitic capacitance (C par ) due to the overlap between the gate and source/drain (S/D) electrodes. [20] On the High-performance, spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure is demonstrated. The spray-pyrolyzed a-IGZO film exhibits bubbles-free smooth surface roughness (0.81 nm) and low oxygen-related defects (22.5%). The fluorine-doped a-IGZO film shows a low resistivity of 1.18 × 10 −3 Ω-cm by NF 3 plasma treatment. This is sufficient to obtain ohmic contact with the source/ drain electrodes and doped IGZO in the offset region of the SA coplanar TFT. The spray-pyrolyzed a-IGZ...

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\begin{array}{*{20}{c}}{InC{l_3} + Ga{{\left( {N{O_3}} \right)}_3} \cdot 6{{\rm{H}}_2}{\rm{O}} + Zn{{\left( {C{H_3}COO} \right)}_2} \cdot 2{{\rm{H}}_2}{\rm{O}}}\\{\mathop \Leftrightarrow \limits^\Delta In{{\left( {OH} \right)}_3} + Ga{{\left( {OH} \right)}_3} + Zn{{\left( {OH} \right)}_2} + 3HCl\left( \uparrow \right)}\\{ + \;3HN{{\rm{O}}_{3}}\left( \uparrow \right) + 2{\rm{C}}{{\rm{H}}_3}COOH}\end{array}

…”

Section: Resultsmentioning

confidence: 99%

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

Bae

Ali

Jang

2022

Adv Materials Technologies

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“…H O ], 0.1 M indium chloride, and 0.025 M gallium chloride (atom ratio of Ga:In:Zn is 25:100:100) in a 2methoxyethanol solvent. Then, 0.2 M monoethanolamine (MEA) was added as a stabilizer [33].…”

Section: Zn Oacmentioning

confidence: 99%

“…During the second bake, when the temperature of the samples was ramped up to 500°C, a minor exothermic reaction occurred, resulting in a slight weight loss [33]. The dihydroxylation reaction of intermediate materials occurred at this stage.…”

Section: Igzo Synthesismentioning

confidence: 99%

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Fabrication of a Solution-Processed IGZO/NiO P-N Diode

Arjmandi

Seraj

2023

Scientia Iranica

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The fabrication of a p-n diode is investigated using a fully solution-processed method. Indium gallium zinc oxide (IGZO) ink was synthesized and deposited on a quartz substrate and annealed to form a thin film serving as an n-type semiconductor. A facile sol-gel method was used to deposit a lithium doped nickel oxide thin film (Li:NiO) as a p-type semiconductor. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to characterize the structural properties of Li:NiO and IGZO films. XRD analysis revealed a polycrystalline bunsenite structure in the Li:NiO films. Nanocrystalline grains were also observed on the surface morphology of the Li:NiO films. The XRD analysis indicated that the IGZO films were amorphous. However, SEM images demonstrate a variety of nanostructures in these films, including hexagons. The Li:NiO molar ratio was optimized to minimize series resistance of the diode. NiO had a carrier density of 7.8E13 3 cm  and mobility of 0.8 2 . cm V S  , the highest mobility ever reported in a NiO film to our knowledge. The carrier density of IGZO was 2.5E16 3 cm  ,and its mobility was 0.95 2 . cm V S  . The fabricated diode exhibited a current ratio of 175 in on and off states and a reverse breakdown voltage of 3.5 V

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“…This is due to the attraction between molecules, ions or atoms in these two phases [15] The ink consists of several components such as pigments that give color to ink, binding agents as media to bind dyes, fillers, Volatile Organic Compound (VOC), and coloring materials [16]. The parameters of a good ink such as density, viscosity, gray level, characteristics, and its removal power for ink markers [17]. Research on making eco-friendly ink markers that have been carried out [9] with basic ingredients is perylene acid.…”

Section: Some Commercial Ink Markers Have High Levels Of Volatile Org...mentioning

confidence: 99%

Carbon Ink Characterization from Banana and Cassava Peels by Carbonization Method

Fatimah

Mustika

Pratiwi

2020

JKPK

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Banana and cassava plants are the most growing plants in the world. The use of both plant's peel is usually for animal feed. This research is intended to utilize banana and cassava peel as a raw material of whiteboard ink markers by varying concentration of the carbons to see its effect on the characteristics of the ink. The carbon concentration variations are 25 g, 30 g, 35 g, 40 g, and 45 g, which is dissolved in 100 ml of the solution. The steps of this research include the carbonization of banana or cassava peel, and then its carbon powder is sifted by 200 mesh. The powder will be dissolved in 50 ml of Arabic gum 10%, 15 ml of PEG-7, and 35 ml of alcohol 70%, then the solution stirred until homogeneous. The result showed that the addition of the Banana or cassava peels carbon concentration effect on the value of density, viscosity, pH, and pigment ink. The characteristic whiteboard ink markers from the banana peel that accordance with the commercial ink. It is consists of 30% Banana peel carbon concentration with a density value of 1.0077 g/cm<sup>3</sup>, viscosity value of 6.2049 cP, pH value of 10.55, and the ink pigment are close enough with the commercial refill ink. While the characteristic from cassava consists of 35% cassava peel carbon concentration with a density value of 1.0893 g/cm<sup>3</sup>, viscosity value of 15,2427 cP, pH value of 8,75, and the ink pigment are close enough with the commercial ink

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Synthesis of IGZO ink and study of ink-jet printed IGZO thin films with different Ga concentrations

Cited by 6 publications

References 11 publications

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes

Fabrication of a Solution-Processed IGZO/NiO P-N Diode

Carbon Ink Characterization from Banana and Cassava Peels by Carbonization Method

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