Synthesis of hydrogenated diamondlike carbon thin films using neon–acetylene based high power impulse magnetron sputtering discharges

Aijaz, Asim; Louring, Sascha; Lundin, Daniel; Kubart, Tomáš; Jensen, Jens; Sarakinos, Kostas; Helmersson, Ulf

doi:10.1116/1.4964749

Cited by 19 publications

(11 citation statements)

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“…The H content of the coatings measured by ERDA correlates with the deposition rate, Figure 6. The H concentration remained low, below 8%, but it could still have decreased the film hardness, as previously described in [25]. The hardness of films deposited on Si samples is also shown in Figure 6 as a function of deposition process.…”

Section: Characterization Thin Film Deposited On Si Substratesupporting

confidence: 73%

“…The increased ionization provided by HiPIMS is beneficial also in reactive deposition of DLC. The use of a reactive environment by the addition of acetylene, to either Ar, Ar/Ne or Ne environment was demonstrated in obtaining hydrogenated DLC coatings with low hydrogen content, with hydrogen contents up to 15%-20% [10,25]. In that case, the HiPIMS plasma activates the reactive gas precursor.…”

Section: Introductionmentioning

confidence: 99%

“…In that case, the HiPIMS plasma activates the reactive gas precursor. The high-density plasma creates radical ions and neutrals that contribute to the film growth, in addition to the C resulting from sputtering, giving rise to higher deposition rates at equivalent average injected power [25,26].…”

Section: Introductionmentioning

confidence: 99%

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A Strategy for Alleviating Micro Arcing during HiPIMS Deposition of DLC Coatings

et al. 2020

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In this work, we investigate the use of high power impulse magnetron sputtering (HiPIMS) for the deposition of micrometer thick diamond like carbon (DLC) coatings on Si and steel substrates. The adhesion on both types of substrates is ensured with a simple Ti interlayer, while the energy of impinging ions is adjusted by using RF (Radio Frequency) biasing on the substrate at −100 V DC self-bias. Addition of acetylene to the working Ar+Ne atmosphere is investigated as an alternative to Ar sputtering, to improve process stability and coatings quality. Peak current is maintained constant, providing reliable comparison between different deposition conditions used in this study. The main advantages of adding acetylene to the Ar+Ne gas mixture are an increase of deposition rate by a factor of 2, when comparing to the Ar+Ne process. Moreover, a decrease of the number of surface defects, from ~40% surface defects coverage to ~1% is obtained, due to reduced arcing. The mechanical and tribological properties of the deposited DLC films remain comparable for all investigated gas compositions. Nanoindentation hardness of all coatings is in the range of 25 to 30 GPa, friction coefficient is between 0.05 and 0.1 and wear rate is in the range of 0.47 to 0.77 × 10−6 mm3 N−1m−1.

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Section: Characterization Thin Film Deposited On Si Substratesupporting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

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A Strategy for Alleviating Micro Arcing during HiPIMS Deposition of DLC Coatings

et al. 2020

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“…In another study with rather high frequency (250 Hz to 1 kHz), the plasma was found to have larger ionized species yielding enhance densification with larger sp 3 fraction [9]. In more recent, works Ar and C 2 H 2 gas mixture were used to deposit a-C films but films were not H free [13,14]. Clearly, HiPIMS offers possibilities to deposit carbon thin films with high density and high sp 3 fractions, and more systematic studies are required to achieve this.…”

Section: Introductionmentioning

confidence: 98%

Density and microstructure of a-C thin films

Kumar

Gupta

Deshpande

et al. 2018

Diamond and Related Materials

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“…[135][136][137] They have been used as the carbon source for SiCN films, where N 2 was used to supply nitrogen, resulting in a complex sputtering process with more than one reactive gas. [58,60] Several electron impact reactions are possible for the C 2 H 2 molecule.…”

Section: Acetylenementioning

confidence: 99%

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

Hänninen¹

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Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N 2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C 2 H 2 ) in addition to N 2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N 2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated.The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N 2 /Ar flow ratios of 0.3 and above. These films showed Si−N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si−Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature iii iv below 200 ℃, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V.The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was show...

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Synthesis of hydrogenated diamondlike carbon thin films using neon–acetylene based high power impulse magnetron sputtering discharges

Cited by 19 publications

References 50 publications

A Strategy for Alleviating Micro Arcing during HiPIMS Deposition of DLC Coatings

A Strategy for Alleviating Micro Arcing during HiPIMS Deposition of DLC Coatings

Density and microstructure of a-C thin films

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

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