Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Cai, Hui; Chen, Bin; Wang, G; Soignard, Emmanuel; Khosravi, Afsaneh; Manca, Marco; Marie, X.; Chang, Shery L. Y.; Urbaszek, B.; Tongay, Sefaattin

doi:10.1002/adma.201605551

Cited by 63 publications

(73 citation statements)

References 36 publications

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“…Reproduced with permission from ref. Copyright 2017, Wiley‐VCH. F, Angle‐resolved PL intensity of ZrS 3 flake, recorded with electric field direction (E) of the polarized excitation laser parallel to the polarization direction (D) of the detector.…”

Section: In‐plane Anisotropic Physical Propertiesmentioning

confidence: 99%

“…It can be seen that the polar diagram of the two most prominent PL peaks representing band edge emission (1.66 eV) and subband emission (1.39 eV) shows 2fold symmetry, indicating anisotropy of PL with an anisotropic ratio up to 5. 104 When the direction of the excitation polarization is parallel to baxis (y-direction), both of them get maximum intensities.…”

Section: Anisotropic Photoluminescencementioning

confidence: 99%

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Emerging in‐plane anisotropic two‐dimensional materials

Han

et al. 2019

InfoMat

272

236

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Black phosphorus (BP) is a rapidly up and coming star in two‐dimensional (2D) materials. The unique characteristic of BP is its in‐plane anisotropy. This characteristic of BP ignites a new type of 2D materials that have low‐symmetry structures and in‐plane anisotropic properties. On this basis, they offer richer and more unique low‐dimensional physics compared to isotropic 2D materials, thus providing a fertile ground for novel applications including electronics, optoelectronics, molecular detection, thermoelectric, piezoelectric, and ferroelectric with respect to in‐plane anisotropy. This article reviews the recent advance in characterization and applications of in‐plane anisotropic 2D materials.

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Section: In‐plane Anisotropic Physical Propertiesmentioning

confidence: 99%

Section: Anisotropic Photoluminescencementioning

confidence: 99%

Emerging in‐plane anisotropic two‐dimensional materials

Han

et al. 2019

InfoMat

272

236

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“…In‐plane anisotropy from chain like features induce highly direction dependent properties. [ 30–33 ] TiS 3 and NbS 3 have essential distinctions in crystal structures, as shown in Figure a. In particular, TiS 3 crystallizes in the monoclinic P2 1 /m space group with a = 4.98 Å, b = 3.39 Å and c = 8.89 Å, in which the metal atom (Ti) is surrounded by six sulfur atoms, forming bicapped distorted tetrahedrons.…”

Section: Figurementioning

confidence: 99%

Phase Transition across Anisotropic NbS₃ and Direct Gap Semiconductor TiS₃ at Nominal Titanium Alloying Limit

Blei

Chen

et al. 2020

Advanced Materials

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for MoS 2x Se 2−2x , [5][6][7][8][9][10] WS 2x Se 2−x2 , [11,12] and ReS 2x Se 2−2x . [13,14] In addition, alloying transition metal atoms in ternary Mo x W 1−x S 2 [15][16][17] and Mo x W 1−x Se 2 [18,19] has enabled engineering of dark and bright excitonic states, exciton binding energies, and quasi-and single-particle band gaps to create highly luminescence 2D semiconducting materials. In these material systems, 2D alloying is commonly accomplished across the same crystalline phases, that is, across 2H-MoS 2 to 2H-MoSe 2 or 2H-WSe 2 to 2H-MoSe 2 by alloying Se into MoS 2 or Mo into WSe 2 , respectively. Overall, these well-investigated alloy systems retain their crystalline structure and phases independently from the composition values.Unlike graphene, however, 2D inorganic mono-, di-, and tri-chalcogenides can crystallize in different phases while keeping their 2D nature. For instance, MoTe 2 is stable in both hexa gonal (2H) and monoclinic (1T') phases whereas WTe 2 crystallize only in 1T' phase in nature. [20,21] Large changes in the crystal structure naturally affect their electronic band structures and as a result, these two phases exhibit semiconducting and metallic behavior in 2H and 1T' phases, respectively, and the structural (2H) and electronic (semiconducting) phase of MoTe 2 can be effectively engineered by laser irradiation [22] or W substitution. [23][24][25] Recently, it has been experimentally demonstrated that these two phases can be controlled on demand through electrolyte gating [26] which introduces a large density of carriers into the 2D sheets and in return increases the total energy of 2H-MoTe 2 to the values of 1T'-MoTe 2 to induce structural transformation. This effect heavily relies on identification of 2D material systems that exhibit formation (total) energies close enough to each other so that one phase can be destabilized over another to induce desired phase changes. However, the library of 2D materials offers only a few candidates with the aforementioned close formation energies, and there is a search for new material systems that can potentially offer easier phase changes (closer formation energies) and broader functionality (band gap range, metal-insulator versus semiconductor-insulator).In this work, we demonstrate for the first time, the novel alloying effects across two different phases pseudo-1D Alloying selected layered transitional metal trichalcogenides (TMTCs) with unique chain-like structures offers the opportunities for structural, optical, and electrical engineering thus expands the regime of this class of pseudoone-dimensional materials. Here, the novel phase transition in anisotropic Nb (1−x) Ti x S 3 alloys is demonstrated for the first time. Results show that Nb (1−x) Ti x S 3 can be fully alloyed across the entire composition range from triclinic-phase NbS 3 to monoclinic-phase TiS 3 . Surprisingly, incorporation of a small concentration of Ti (x ≈ 0.05-0.18) into NbS 3 host matrix is sufficient to induce triclinic to monoclinic transition. Theoretical studies s...

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“…As one type of counterpart, low‐symmetry 2D materials (such as ReS 2 , ReSe 2 , GaTe, and 1T′ MoTe 2 ) which are distinctly different from high‐symmetry 2D materials, would provide colossal opportunities to explore novel GB structures and properties. ReS 2 , for example, forms a distorted octahedral (1T′) structure with triclinic symmetry as a result of charge decoupling from the extravalence electron of the Re atom .…”

Section: Introductionmentioning

confidence: 99%

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS₂

Wang

Hong

et al. 2019

Adv Funct Materials

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Grain boundaries (GBs) significantly affect the electrical, optical, magnetic, and mechanical properties of 2D materials. An anisotropic 2D material like ReS 2 provides unprecedented opportunities to explore novel GB properties, since the reduced lattice symmetry offers greater degrees of freedom to build new GB structures. Here the atomic structure and formation mechanism of unusual multidomain and diverse GB structures in the vapor phase synthesized ReS 2 atomic layers are reported. Using high-resolution electron microscopy, two major categories of GBs are observed in each ReS 2 domain, namely, the joint GB including three structures, and the GBs formed from a reconstruction of Re4-chains including seven different structures. Based on the experimental observations, a novel "nanoassembly growth model" is proposed to elucidate the growth process of ReS 2 , where three types of Re4-chain reconstruction give rise to a multidomain structure. Moreover, it is shown that by controlling the thermodynamics of the growth process, the structure and density of GB in the ReS 2 domain can be tailored. First-principles calculations point to interesting new properties resulting from such GBs, such as a new electron state or ferromagnetism, which are highly sought after in the construction of novel 2D devices.

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Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Cited by 63 publications

References 36 publications

Emerging in‐plane anisotropic two‐dimensional materials

Emerging in‐plane anisotropic two‐dimensional materials

Phase Transition across Anisotropic NbS₃ and Direct Gap Semiconductor TiS₃ at Nominal Titanium Alloying Limit

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS₂

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Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Cited by 63 publications

References 36 publications

Emerging in‐plane anisotropic two‐dimensional materials

Emerging in‐plane anisotropic two‐dimensional materials

Phase Transition across Anisotropic NbS3 and Direct Gap Semiconductor TiS3 at Nominal Titanium Alloying Limit

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS2

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Phase Transition across Anisotropic NbS₃ and Direct Gap Semiconductor TiS₃ at Nominal Titanium Alloying Limit

Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS₂