Synthesis of GaN nanotip triangle pyramids on 3C–SiC epilayer/Si substrates via an in situ In-doping technique

Abstract

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

Nanostructural characteristics of oxide-cap GaN nanotips by iodine–gallium ions etching

“…In previous reports, Hsu et al fabricated GaN nanotips using the electron cyclotron resonance (ECR) plasma process [14] and Dai et al created GaN nanotips by two hot boat chemical vapor deposition [15]. Additionally, Ng et al used selective and anisotropic etching to make GaN nanotips [16].…”

Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowires

“…Our experiments were carried out in a specially designed two-hot-boat chemical vapour deposition system [17]. Inside a chamber, there are two horizontally placed molybdenum boats for loading the source and the substrate, respectively.…”