Synthesis of GaN nanochestnuts by hydride vapour phase epitaxy

Shin, Min Jeong; Moon, J.Y.; Kwon, H.Y.; Choi, Yun-Jeong; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong-Woo; Huh, Yong-Hak

doi:10.1016/j.matlet.2010.02.065

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…8) Since the novel properties and potential applications of nanomaterials depend strongly on size, morphology, and shape, much effort has been applied toward the synthesis of a variety of nanostructures, including nanorods, nanowires, nanoneedles, nanoflowers, nanochestnuts, nanotubes, nanobelts, nanorings, nanowhiskers, nanotetrapods, nanoribbons, and nanoparticles. [9][10][11][12] Nanostructures may be selected according to density, and size to optimize the qualities appropriate for a particular advanced high-quality device. 13) Nanostructures are building blocks for the fabrication of various nanometrescale devices.…”

Section: Introductionmentioning

confidence: 99%

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Shin

Kim

Jeon

et al. 2012

Jpn. J. Appl. Phys.

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We studied GaN nanorods grown by hydride vapour phase epitaxy processes to identify optimal growth conditions that yield nanorods appropriate for use in nanodevices. The growth temperature was varied over the range 625–670 °C, and the morphology of the samples changed with increasing growth temperature. GaN nanorods formed at growth temperatures of 645 °C on a Si(111) substrate. At a fixed growth temperature of 645 °C, the HCl:NH3 gas flow ratio was adjusted from 1:37 to 1:41. GaN nanorods with a small diameter of 26 nm formed at a HCl:NH3 ratio of 1:38. Individual GaN nanorods clearly grew along the axial direction, perpendicular to the substrate. Cathodoluminescence measurements at room temperature revealed a red shift as the acceleration energy was increased to 15 keV, possibly associated with the internal electric field.

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Section: Introductionmentioning

confidence: 99%

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Shin

Kim

Jeon

et al. 2012

Jpn. J. Appl. Phys.

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“…In other reports [12][13][14], growth temperature of GaN NWs by chemical vapor deposition (CVD) and thermal evaporation is very high. The growth of GaN NWs by hydride vapour phase epitaxy (HVPE) method usually occurs at high temperatures (~1050°C) using toxic gas such as NH 3 [15]. Some researchers have grown GaN NWs by N plasma using dielectricbarrier discharge (DBD) PECVD via Au catalyst on c-plane sapphire at 900°C [16,17].…”

Section: Introductionmentioning

confidence: 99%

A catalyst free method to grow GaN nanowires on porous Si at low temperature

Gholampour

Abdollah-zadeh

Shekari

et al. 2015

Ceramics International

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“…Low-dimensional semiconductor nanostructures such as quantum dots, wires, rods and needles and nanochestnuts are promising for use as active materials in various optoelectronic devices because of their unique physical and chemical properties, which include their extremely small volume and modified light-matter interaction [15][16][17][18][19][20][21][22][23]. In particular, these structures could provide additional advantages for light emission and absorption devices in terms of an increased junction area, an improved carrier confinement, an enhanced polarization dependence of reflectivity and a reduced temperature sensitivity [24][25][26].…”

Section: Introductionmentioning

confidence: 99%