Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

Glavin, Nicholas R.; Jespersen, Michael L.; Check, Michael H.; Hu, Jianjun; Hilton, Albert; Fisher, Timothy S.; Voevodin, Andrey A.

doi:10.1016/j.tsf.2014.07.059

Cited by 95 publications

(73 citation statements)

References 32 publications

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“…High temperature growth and an appropriate surface template (e.g., highly ordered pyrolytic graphite) facilitates the growth of nanocrystalline h-BN with structural and electrical properties close to mechanically exfoliated h-BN. 6 The ultra-thin amorphous BN film shown in Figure 9 was grown with 5 laser pulses and, consequently, has a thickness of 1.5 nm, corresponding to about 4-5 monolyaer thickness of the crystalline 2D equivalent. This dense and fully stoichiometric BN film extends over the entire macroscopic sample area and has a very clean and damage free interface with the underlying sapphire, indicating a negligible impact of the energetic species in laser ablated plasma on the substrate surface.…”

Section: Resultsmentioning

confidence: 99%

“…In large scale dielectric growth of these films, the sample is rotated and is typically at elevated temperature, which can mitigate the non-uniformity in film thickness and B:N ratio that is observed in these studies. 6 Plasma spectroscopy techniques discussed here can be used to optimize the growth of ultrathin dense amorphous BN films and provide insights into laser ablation processing of 2D insulating materials.…”

Section: Resultsmentioning

confidence: 99%

“…6 Laser ablation occurred from a Boron Nitride target (99.99% pure) at a square area of 2.66 mm Â 1.50 mm, using a KrF LPX Lambda Physik excimer laser. At 900 mJ/pulse, the single pulse energy was 22 J/cm 2 , pulse width of 30 ns, and repetition rate of 1 Hz.…”

Section: Methodsmentioning

confidence: 99%

“…6 The kinetic energies of the species within the plasma sheath created by PLD enable significant atomic mobility on substrate surfaces, leading to nanocrystalline growth at temperatures 300 C lower than that required for comparable chemical vapor deposited (CVD) films. The ability to grow nanoscale insulating films at reduced processing temperatures and on wafer-scale areas gives the potential for compatibility with numerous 2D semiconductor material systems and, hence, provides for an attractive, alternative growth method for integration of boron nitride into nanoelectronic device architectures.…”

Section: Introductionmentioning

confidence: 99%

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Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Glavin

Muratore

Jespersen

et al. 2015

Journal of Applied Physics

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Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B þ , B*, N þ , N*, and molecular species including N 2 *, N 2 þ , and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N þ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N þ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas. V C 2015 AIP Publishing LLC. [http://dx.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Glavin

Muratore

Jespersen

et al. 2015

Journal of Applied Physics

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“…Recent studies’ utilization of pulsed laser deposition allows for different structural forms of boron nitride to form a thin film on a substrate of interest. [25–27] Amorphous boron nitride ( a- BN) is used in this work as a means to encapsulate large areas of EG and is performed at temperatures around 200 °C.…”

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confidence: 99%

Preservation of Surface Conductivity and Dielectric Loss Tangent in Large‐Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations

Rigosi

Glavin

Liu

et al. 2017

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Regarding the improvement of current quantized Hall resistance (QHR) standards, one promising avenue is the growth of homogeneous monolayer epitaxial graphene (EG). A clean and simple process was used to produce large, precise areas of EG. Properties like the surface conductivity and dielectric loss tangent remain unstable when EG is exposed to air due to doping from molecular adsorption. Experimental results are reported on the extraction of the surface conductivity and dielectric loss tangent from data taken with a non-contact resonance microwave cavity, assembled with an air-filled, standard R100 rectangular waveguide configuration. By using amorphous boron nitride (a-BN) as an encapsulation layer, stability of EG’s electrical properties under ambient laboratory conditions is greatly improved. Moreover, samples were exposed to a variety of environmental and chemical conditions. Both thicknesses of a-BN encapsulation thickness are sufficient to preserve surface conductivity and dielectric loss tangent to within 10 % of its previously-measured value, a result which has essential importance in the mass production of millimeter-scale graphene devices demonstrating electrical stability.

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Recent Progress on the Synthesis of 2D Boron Nitride Nanosheets

2016

Advanced 2D Materials

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Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

Cited by 95 publications

References 32 publications

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

Preservation of Surface Conductivity and Dielectric Loss Tangent in Large‐Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations

Recent Progress on the Synthesis of 2D Boron Nitride Nanosheets

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