Synthesis of confined electrically conducting carbon nanowires by heavy ion irradiation of fullerene thin film

Kumar, Amit; Avasthi, D.K.; Tripathi, A.; Kabiraj, D.; Singh, Fouran; Pivin, J.C.

doi:10.1063/1.2404794

Cited by 64 publications

(43 citation statements)

References 29 publications

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“…In addition the finite size of tip may have influence. Fourier transform infrared spectroscopy 18 has previously revealed that the track is surrounded by a polymerized annular cylindrical region. The carbon nanowires are predominantly parallel to each other and perpendicular to the substrate, because the irradiation has been performed perfectly perpendicular to fullerene films.…”

Section: Methodsmentioning

confidence: 99%

Formation and characterization of carbon nanowires

Kumar

Avasthi

Tripathi

et al. 2007

Journal of Applied Physics

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This article reports on the formation and electronic characteristics of conducting carbon nanowires produced by swift heavy ion irradiation of a fullerene thin film. This study shows that it is possible to create arrays of carbon nanowires, which are perfectly parallel to each other and perpendicular to the substrate. As-deposited fullerene films exhibit poor field emission characteristics with breakdown fields as high as 51 V / m, whereas low dose ion irradiated fullerene film produces a threshold field as low as 9 V / m. The present approach of making conducting carbon nanowires by ion irradiation for potential field emitters and large area applications is also discussed.

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Section: Methodsmentioning

confidence: 99%

Formation and characterization of carbon nanowires

Kumar

Avasthi

Tripathi

et al. 2007

Journal of Applied Physics

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“…The same effect has been observed in fullerenes. 106 Normally the tracks are well aligned with respect to the beam directions and themselves can be viewed as nanostructures inside bulk materials. The track cores can be etched away and filled with some other material, which enables production of long straight NWs.…”

Section: A Production Of Defects In Bulk Targetsmentioning

confidence: 99%

“…Low-dose irradiation also gave rise to another interesting phenomenon: conducting NWs parallel to each other, embedded in fullerene matrix were synthesized by high energy heavy ion bombardment of thin fullerene films. 106 The typical diameter of the conducting tracks was about 40-100 nm. The creation of conducting wires could be explained by transformation of fullerene to conducting forms of carbon in the ion track, surrounded by the polymerized zone.…”

Section: Ion Irradiation Of Fullerenes and Fullerene-nanotube Systemsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

935

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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“…The field emission properties of these conducting nanowires were also undertaken 44 . 45 , resulting in formation of Si nanocrystals in the film. This was investigated by PL and TEM.…”

Section: Generation Of C Nanowire Like Structuresmentioning

confidence: 99%

Modification and Characterisation of Materials by Swift Heavy Ions

Avasthi¹

2009

DSJ

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Swift heavy ions (SHI) available with 15 million Volt Pelletron accelerator at Inter University Accelerator Centre (IUAC) Delhi, formerly known as Nuclear Science Centre, (NSC), provide a unique opportunity to researchers for accelerator based materials science research. The major research areas can be broadly categorised as electronic sputtering, interface modifications, synthesis and modification of nanostructures, phase transitions and ion beam-induced epitaxial crystallisation. In, general, SHI irradiation based-materials may not be economically feasible, still it could be of interest for very specific cases in defence and space research. The paper gives a glimpse of the current research activities in materials science with SHIs, at IUAC.Keywords: Swift heavy ions, SHI, materials science, materials research systhesis of materials, characterisation of materials, nuclear energy loss, ion energy loss, electronic energy-loss-defects in materials, defect engineering INTRODUCTIONThe ions with energy ranging from a fraction of keV to GeV are useful in synthesis, modification and characterization of materials. The energetic ions during their passage through a material loose energy via two processes. These are nuclear energy loss S n and electronic energy loss S e . In the former process, the energy is lost by elastic collisions of incident ions with the atoms in the material, which is dominant at low energies. In the electronic energy loss process, dominant at high energies (>1 MeV/nucleon), the energy is lost by inelastic collisions of the ion with the atoms, leading to excitation or ionisation of the atoms. At these energies of heavy ions, the velocity of the ion is comparable to or higher than the velocity of Bohr electron. The ions with such high energies are also referred to as Swift Heavy Ions (SHI). The electronic energy loss for SHI is, generally, about two orders of magnitude higher than the nuclear energy loss1 . An interesting characteristic of the SHI is that it creates a columnar type of defect along its path (called as ion track), specially, in insulators. SHI during its passage through material can cause defect annealing, cluster of point defects and columnar type of defects depending on the mass and energy of the ion and the material. Therefore the SHI can be used for engineering the defects in the materials. The parameters of ion beam, which play crucial role in defect engineering, are the energy deposited per unit length and the fluence.The ion mass and its energy, decide the magnitudes of the electronic as well as nuclear energy losses. Especially for heavy ions at high energies (i.e., for SHI), the electronic energy loss decides the type of defects as the nuclear energy loss. The other ion beam parameter, fluence, dictates the number of defects (produced). The number of ion

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Synthesis of confined electrically conducting carbon nanowires by heavy ion irradiation of fullerene thin film

Cited by 64 publications

References 29 publications

Formation and characterization of carbon nanowires

Formation and characterization of carbon nanowires

Ion and electron irradiation-induced effects in nanostructured materials

Modification and Characterisation of Materials by Swift Heavy Ions

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