2008
DOI: 10.1016/j.diamond.2008.01.108
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Synthesis of carbon coated β-SiC nanofibers by microwave plasma assisted chemical vapour deposition in CH4/H2 gas mixture

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Cited by 5 publications
(4 citation statements)
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“…In detail, when the temperature is increased to more than 800°C17, the Al atoms evaporate from the Al sheet and integrate as droplets in a low-temperature zone. At the same time, when the temperature is greater than 1000°C active carbon atoms form in the atmosphere due to CH 4 cracking18. In this case, there are various atomic radicals, including Al, AlO x , C, Al 4 O 4 C and perhaps other Al-C-O-based clusters, are present in the atmosphere.…”
Section: Resultsmentioning
confidence: 99%
“…In detail, when the temperature is increased to more than 800°C17, the Al atoms evaporate from the Al sheet and integrate as droplets in a low-temperature zone. At the same time, when the temperature is greater than 1000°C active carbon atoms form in the atmosphere due to CH 4 cracking18. In this case, there are various atomic radicals, including Al, AlO x , C, Al 4 O 4 C and perhaps other Al-C-O-based clusters, are present in the atmosphere.…”
Section: Resultsmentioning
confidence: 99%
“…The gas mixture composition was ensured by mass flowmeters computer controlled in order to maintain both the CH 4 /H 2 ratio and the total pressure at constant values. The substrates used in this study were Si (100) covered by a Fe catalyst thin film that researchers [5] had deposited by a high vacuum thermal deposition system. The thickness of the Fe thin film was about 10 nm.…”
Section: Carbidesmentioning
confidence: 99%
“…It is also used in the form of tubes, boats and crucibles to handle molten metals and as part of electronic devices used for thermoionic transducers [4] . Silicon carbide (SiC) is an important semiconductor which can be operated at high powers, high temperatures, and high frequencies [5] . Due to its exceptional hardness and superior wear resistance, tungsten carbide (WC) has a wide range of industrial applications.…”
Section: Introductionmentioning
confidence: 99%
“…The difference between these two techniques is that the first is able to independently control the plasma density as well as the degree of dissociation, while the second controls the surface chemistry and the growth mechanisms. In this study, we have developed an MPACVD system using a continuous microwave source at 2.45 GHz and have obtained interesting results for diamond growth, especially by studying the role of atomic hydrogen in such a process [8][9][10].…”
Section: Introductionmentioning
confidence: 99%