Synthesis of Cadmium Oxide/Si Heterostructure for Two-Band Sensor Application

Salim, Evan T.; Ismail, Raid A.; Fakhri, Makram A.; Rasheed, Bassam G.; Salim, Zaid T.

doi:10.1007/s40995-018-0607-8

Cited by 56 publications

(12 citation statements)

References 23 publications

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“…Four known POAs, isopteropodine (4), pteropodine (5), uncarine F (6), and isopteropodic acid (7) (Figure 1) were also isolated, and their structures characterized by NMR spectroscopy and literature comparison. 16,17 Alkaloid 1 had the molecular formula C 21 H 26 O 5 N 2 from the high-resolution electrospray ionization-mass spectrometry (HRESI-MS) ion peak at m/z 387.1929 [M + H] + (calcd 387.1920) and 13 C NMR data. Thus, it has an additional 18 mass units compared to the known POAs 4, 5, and 6.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Absolute Configuration of Alkaloids from Uncaria longiflora through Experimental and Computational Approaches

et al. 2019

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The structure elucidation of three new alkaloids named isoformosaninol (1), formosaninol (2), and longiflorine (3), isolated from the leaves of Uncaria longiflora var. pteropoda (Miq.) Ridsdale, along with their biosynthetic pathways are discussed. Their absolute structures were determined through a combination of physical data interpretation and quantum chemical calculations using the time-dependent density functional theory (TDDFT) method.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Absolute Configuration of Alkaloids from Uncaria longiflora through Experimental and Computational Approaches

et al. 2019

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“…Fig.11shows the current-voltage properties of HgI 2 NTs/Si heterojunction measured at room temperature at. It is clear that the forward current consisting of two regions; in the rst region the current increased slightly with bias voltage with which indicates that the recombination current is larger than generation current, while at large bias the current increases exponentially with voltage due to domination of diffusion current[17][18][19]. The reveres current was shown to be increased slightly at small voltage and after bias with 2V, it increased signi cantly due to the surface leakage current ow through the edges of the heterojunction.…”

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confidence: 99%

Preparation of Nanostructured HgI2 Nanotubes /Si Photodetector by Laser Ablation in Liquid

Abd-Alrahman

Ismail

Mohammed

2021

Preprint

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In this work, HgI2 nanotubes/Si heterojunction has been prepared by pulsed laser ablation in ethanol at laser fluence of 12.7 J/cm2. The structural and optical properties of HgI2 nanotubes (NTs) are studied. The X-ray diffraction (XRD) result shows the presence of the mixture of tetragonal and orthorhombic phases of HgI2. The optical properties results show that the optical energy gap of HgI2 NTs was 2.98 eV measured at room temperature. The photoluminescence (PL) spectra of HgI2 display a single emission centered at 535nm. Fourier transformed infrared (FT-IR) results reveal the existence of small bonds at 612 and 1102 cm− 1. Scanning electron microscope (SEM) image show formation of nanotubes and spherical nanoparticles with average particle size of 23nm. Transmission electron microscope (TEM) image of HgI2 confirms the formation of nanotubes morphology with an average diameter of 80nm and an average length of 1.6µm. The I-V curve of HgI2 NTs/p-Si heterojunction were measured at dark and illumination. The responsivity of HgI2 NTs/p-Si heterojunction photodetector is 1.09A/W at 450 and the detectivity and external quantum efficiency are 3.6 ×1012 Jones at 450 and 3×102% at 400nm, respectively, without using post annealing.

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“…11 shows the current-voltage properties of HgI 2 NTs/Si heterojunction measured at room temperature at. It is clear that the forward current consisting of two regions; in the rst region the current increased slightly with bias voltage with which indicates that the recombination current is larger than generation current, while at large bias the current increases exponentially with voltage due to domination of diffusion current [17][18][19]. The reveres current was shown to be increased slightly at small voltage and after bias with 2V, it increased signi cantly due to the surface leakage current ow through the edges of the heterojunction.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Nanostructured HgI2 Nanotubes/Si Photodetector by Laser Ablation in Liquid

Abd-Alrahman

Ismail

Mohammed

2022

Silicon

View full text Add to dashboard Cite

In this work, HgI 2 nanotubes/Si heterojunction has been prepared by pulsed laser ablation in ethanol at laser uence of 12.7 J/cm 2 . The structural and optical properties of HgI 2 nanotubes (NTs) are studied.The X-ray diffraction (XRD) result shows the presence of the mixture of tetragonal and orthorhombic phases of HgI 2 . The optical properties results show that the optical energy gap of HgI 2 NTs was 2.98 eV measured at room temperature. The photoluminescence (PL) spectra of HgI 2 display a single emission centered at 535nm. Fourier transformed infrared (FT-IR) results reveal the existence of small bonds at 612 and 1102 cm − 1 . Scanning electron microscope (SEM) image show formation of nanotubes and spherical nanoparticles with average particle size of 23nm. Transmission electron microscope (TEM) image of HgI 2 con rms the formation of nanotubes morphology with an average diameter of 80nm and an average length of 1.6µm. The I-V curve of HgI 2 NTs/p-Si heterojunction were measured at dark and illumination.The responsivity of HgI 2 NTs/p-Si heterojunction photodetector is 1.09A/W at 450 and the detectivity and external quantum e ciency are 3.6 ×10 12 Jones at 450 and 3×10 2 % at 400nm, respectively, without using post annealing.

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Synthesis of Cadmium Oxide/Si Heterostructure for Two-Band Sensor Application

Cited by 56 publications

References 23 publications

Absolute Configuration of Alkaloids from Uncaria longiflora through Experimental and Computational Approaches

Absolute Configuration of Alkaloids from Uncaria longiflora through Experimental and Computational Approaches

Preparation of Nanostructured HgI2 Nanotubes /Si Photodetector by Laser Ablation in Liquid

Preparation of Nanostructured HgI2 Nanotubes/Si Photodetector by Laser Ablation in Liquid

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