Synthesis of c-axis preferred orientation ZnO:Al transparent conductive thin films using a novel solvent method

Tseng, Yung-Kuan; Gao, G.H.; Chien, Shih-Chun

doi:10.1016/j.tsf.2010.03.143

Cited by 28 publications

(10 citation statements)

References 12 publications

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“…For n-type [2][3][4]7,8,39], doping with group-III elements (B, Al, Ga, In), as substitutional elements for Zn, has been attempted by many groups, resulting in high-quality, optically transparent, and highly conductive ZnO films as this substitution of divalent Zn 2+ by a trivalent ion generates an excessive free electron. Especially, Al-doped ZnO (AZO) thin films have attracted a considerable amount of interest due to their good electrical conductivity with reasonably low optical loss [46].…”

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confidence: 99%

AZO Thin Films by Sol-Gel Process for Integrated Optics

et al. 2013

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Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC) of the (002) direction (TC (002) ≈ 3). The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Scanning Electronic Microscopy (SEM). Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm).

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AZO Thin Films by Sol-Gel Process for Integrated Optics

et al. 2013

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“…For example, when the ZnO doped by III group elements, such as Al, Ga, and In, this treatment improves the optical properties, and thus the ZnO is more suitable for optoelectronic applications. [7][8][9] The ZnO also provides the opportunity for making optical band engineering by using it in UV detectors and light emitters, 10,11 as well as in photodiodes and photodetectors. In a study performed on a ZnObased Au/ZnO:Co/n-Si device with transition element doping, the device exhibited a photovoltaic behavior, and the photoconductivity mechanism was controlled by the presence of a continuous distribution of cobalt-based traps.…”

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confidence: 99%

Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications

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et al. 2022

JOM

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Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV-visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p-Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV-visible spectra provided the transmittance plots and band gap energy values. I-V measurements were performed on the fabricated Au/ZnO/p-Si and Au/ZnO:Cr/p-Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I-V measurements by various techniques, and have been discussed in detail. A 100-mW/cm 2 power intensity light was exposed on the Au/ZnO:Cr/p-Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/p-Si device can be thought of for optoelectronic applications.

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“…In the past, materials like indium tin oxide (ITO) [1,2], AZO [3][4][5], metal NWs (Cu NWs [6,7], Ag NWs [8]. ), are widely used for the preparation of transparent conductive films.…”

Section: Introductionmentioning

confidence: 99%

The fabrication of Cu nanowire/graphene/Al doped ZnO transparent conductive film on PET substrate with high flexibility and air stability

et al. 2017

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a b s t r a c tThe fabricating of transparent conductive films with low resistance, high transparency, flexibility and air stability is significant in the study of flexible electronics. In this work, Cu nanowire/Graphene/Al doped ZnO (Cu/Gra/AZO) composite transparent conductive films were fabricated on PET substrate at room temperature. It is found that this composite film has a high transmittance of 74% at 550 nm, a low sheet resistance of 9.40 X/sq and good air stability. In this sandwich structure electrode, Cu nanowires (NWs) play an important role for ensuring the low resistance of the composite film, and the addition of graphene further reduces the resistance plus protects Cu NWs from oxidation. Moreover, the top layer AZO can protect the graphene layer from external damage and improve its stability.

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Synthesis of c-axis preferred orientation ZnO:Al transparent conductive thin films using a novel solvent method

Cited by 28 publications

References 12 publications

AZO Thin Films by Sol-Gel Process for Integrated Optics

AZO Thin Films by Sol-Gel Process for Integrated Optics

Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications

The fabrication of Cu nanowire/graphene/Al doped ZnO transparent conductive film on PET substrate with high flexibility and air stability

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