Synthesis of Broad Band Violet—Blue Light-Emitting Core—Shell Cr3+:C—CaIn2O4 Nanowires

Tiwari, Barkha; Sharma, Sanjeev; Sasisekharan, Ram; Banerji, P.

doi:10.1166/jnn.2019.16596

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By adjusting the external parameters such as chemical potential and optical/electrical/magnetic field, such ions may acquire either lower or higher valence state resulting in tailored material properties. Doping of chromium ions in an oxide like Al2O3 offers many applications such as solid-state electronics [8], catalytic activity [9], phosphors [10]. Doping of chromium ions in place of aluminum ions is easy as atomic radii of both the elements are almost equal, namely, 0.054 and 0.062 nm for Al 3+ and Cr 3+ , respectively [11].…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties of Cr3+ Doped Al2O3 of a Hierarchical Nanostructure Synthesized Using a Highly Porous Precursor of Tubular AlO(OH)⋅αH2O Fibers

Jangu

Sharma

Sudhansu³

et al. 2021

MSF

View full text Add to dashboard Cite

Herein, we have developed a Cr3+ doped Al2O3 of a hierarchical nanostructure by a simple two-step synthesis. A pure AlO(OH)⋅αH2O, as synthesized in forms of small tubular fibers by hydrolysis of Al-metal sheets, is easily doped with selective Cr3+ dosages up to 2.0 mol% using an aqueous CrO3. As-synthesized samples exhibit XRD of a single phase Cr3+: Al2O3 of a rhombohedral crystal structure. Average pore-volume is decreased as 98.1, 89.8, and 61.5 cm3-g-1 in the 0.5, 1.0 and 2.0 % Cr% doped samples, with average pore radius of 1.70, 2.17 and 1.90 nm, respectively, as measure from BET specific surface area. Local Al-O vibrations exhibit IR bands of 400 to 1200 cm-1 intrinsic of oxygen polygons. At room temperature, a duly tailored dielectric permittivity of 480 is obtained in a 2.0 mol% Cr3+:Al2O3 and that is enhanced progressively on heating it over 25 to 300 °C, showing a value 6700 at 300 °C in phonon induced dynamics of charge carriers, useful for solid-state electronics.

show abstract