Synthesis of Bi2SiO5 thin films by confocal dual magnetron sputtering-annealing route

Depablos-Rivera, Osmary; Bouyanfif, H.; Zeinert, A.; Marrec, F. Le; Rodil, S.E.

doi:10.1016/j.tsf.2019.04.033

Cited by 8 publications

(6 citation statements)

References 42 publications

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“…The active modes at 70, 97, 149, 208, 298, 372, 433 cm −1 of the Raman spectra also matched well with monoclinic Cc phase of Bi 2 SiO 5 (Supplementary Fig. 11 ) 35 . Additionally, the sharp XRD peaks, which can be assigned to ( h 00) crystal planes, further confirmed the high crystalline quality of the CVD-grown Bi 2 SiO 5 nanoplates (Supplementary Fig.…”

Section: Resultssupporting

confidence: 67%

“…Bi 2 SiO 5 is a well-known high- κ dielectrics with an Aurivillius-type layered structure and a large band gap of 3.5~4.4 eV 32 – 35 . According to the previous works regarding the bulk single crystals and polycrystalline powders of Bi 2 SiO 5 , Bi 2 SiO 5 shows an anisotropic dielectric constant 36 , 37 and its out-of-plane dielectric constant can be as high as 30~80 36 – 39 , and thus was suggested as a potential candidate for high-temperature dielectrics 39 .…”

Section: Introductionmentioning

confidence: 99%

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Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

et al. 2023

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Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi2SiO5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi2SiO5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS2 as high-κ dielectrics and screening layers. The Bi2SiO5 gated MoS2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi2SiO5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.

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Section: Resultssupporting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

et al. 2023

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“…However, the authors did not compare the fitting parameters of Cc structure with those of orthorhombic Cmcm symmetry. As Rodil et al noted, it is challenging to distinguish Cc and Cmcm symmetry by using XRD exclusively . Recent literature has reported an orthorhombic phase of BSO at room temperature. , Although Cmcm must not show the ferroelectric response, there is still a possibility to be considered; the phase transition from Cmcm to Cc symmetry under the electric field.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Crystal Growth of Bismuth Silicate Driven by Fluorite-like Layers

Kodera

Shiraishi

Funakubo

2020

Crystal Growth & Design

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Bi2SiO5 is a layered material with Bi2O2 2+ and SiO3 2– layers, which does not include perovskite-type layers. Bi2SiO5 epitaxial films were grown by pulsed laser deposition on perovskite-type (110)SrTiO3 and (001)SrTiO3 substrates. A detailed investigation of the growth revealed a relatively narrow process window for obtaining epitaxial films without impurity phases, and the anion configuration in fluorite-like Bi2O3 matched that of SrTiO3, indicating that the fluorite-like layers governed the epitaxial growth. Our findings provide a new strategy for the heteroepitaxial growth of materials having fluorite-like layers.

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“…In the FTIR spectrum of the initial non-annealed sample BSO_hν (Figure 6b), a shoulder is observed around 855 cm -1 , which indicates the formation of the Bi-O-Si interface in the nanomaterial that was laser-irradiated as a post-treatment stage during its preparation [20]. This band is known to be related to the stretching vibration mode of Bi-O-Si bonds in the structure of bismuth metasilicate Bi 2 SiO 5 [38]. It is also seen in the spectra of samples BSO_hν_3 and BSO_hν_4.…”

Section: Samples Of the Bso_hν Groupmentioning

confidence: 96%

“…As seen in Figure 6a, upon further annealing of the samples, a set of additional narrow vibrational bands appeared in the FTIR spectra of samples BSO_5, BSO_6 and BSO_7, which are characteristic of bismuth metasilicate Bi 2 SiO 5 . First of all, there are three intense bands at 855, 945, and 1030 cm −1 that are assigned to the stretching vibration mode of Bi-O-Si bonds, isolated SiO 5 6− groups, and to the stretching modes Si-O-Si of the SiO 4 tetrahedral units, respectively [28,38,39]. In the longer-wavelength spectral region, there are bands of phase Bi 2 SiO 5 at 432 and 565 cm -1 and a weak band at 675 cm -1 , which are attributed, respectively, to the stretching vibration mode of Bi-O bonds, to bending (SiO 4 ) 4groups, and presumably to the bending vibrations of the Si-O bond [38,39].…”

Section: Samples Bso_5 Bso_6 Bso_7 and Bso_8mentioning

confidence: 99%

Phase and Structural Thermal Evolution of Bi–Si–O Catalysts Obtained via Laser Ablation

et al. 2022

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Laser methods are successfully used to prepare complex functional nanomaterials, especially for biomedicine, optoelectronics, and heterogeneous catalysis. In this paper, we present complex oxide and composite nanomaterials based on Bi and Si produced using laser ablation in liquid followed by subsequent powder annealing. Two synthesis approaches were used, with and without laser post-treatment of mixed (in an atomic ratio of 2:1) laser-generated Bi and Si colloids. A range of methods were used to characterize the samples: UV-Vis diffusion reflection, IR and Raman spectroscopy, synchronous thermal analysis, X-ray diffraction, transmission electron microscopy, as well as specific surface-area evaluation. We also followed the dynamics of phase transformations, as well as composition, structure and morphology of annealed powders up to 800 °C. When heated, the non-irradiated series of samples proceeded from metallic bismuth, through β-Bi2O3, and resulted in bismuth silicates of various stoichiometries. At the same time, in their laser-irradiated counterparts, the formation of silicates proceeded immediately from the amorphous Bi2SiO5 phase formed after laser treatment of mixed Bi and Si colloids. Finally, we show their ability to decompose persistent organic molecules of Rhodamine B and phenol under irradiation with a soft UV (375 nm) source.

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Synthesis of Bi2SiO5 thin films by confocal dual magnetron sputtering-annealing route

Cited by 8 publications

References 42 publications

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Epitaxial Crystal Growth of Bismuth Silicate Driven by Fluorite-like Layers

Phase and Structural Thermal Evolution of Bi–Si–O Catalysts Obtained via Laser Ablation

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