Synthesis of arsenic-doped p-type ZnO films by addition of As2O3 to the ZnO spin coating solution

Park, Chanhyoung; Kim, Solbaro; Lim, Sangwoo

doi:10.1016/j.ssc.2013.05.012

Cited by 8 publications

(4 citation statements)

References 33 publications

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“…This may be the reason carrier density increased during the electron beam treatment process. Although a significant improvement in grain size by electron beam treatment was not observed in the current study, there is a chance that it improves the crystallinity of ZnO film [15], which would contribute to the increase in carrier mobility. In summary of the above discussion, increases in carrier concentration and mobility of undoped and In-doped ZnO films can be achieved by applying the proper electron beam treatment.…”

Section: Electrical Properties Of the Zno Thin Filmscontrasting

confidence: 59%

“…Since the process of electron beam treatment can be conducted in a couple of minutes, throughput of the ZnO crystallization process will be increased by at least 100-fold if the annealing process, whose whole process time is more than couple of hours, is replaced by electron beam treatment. In addition, since electron beam treatment on ZnO produces higher carrier concentrations [15], it is expected that electron beam treatment plays a similar role as the doping process. If the electron beam treatment can be used to address the deterioration of electrical properties observed at high In-doping levels, this method will result in reducing the use of indium, which is a rare earth element.…”

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confidence: 99%

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Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Kim

et al. 2015

J Sol-Gel Sci Technol

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In-doped ZnO thin films were prepared by a sol-gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high Indoping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% Indoped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 9 10 -2 X cm, while 57.1 X cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beamtreated ZnO thin film. Graphical Abstract 10

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Section: Electrical Properties Of the Zno Thin Filmscontrasting

confidence: 59%

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confidence: 99%

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Kim

et al. 2015

J Sol-Gel Sci Technol

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“…However, it is difficult to achieve reliable and reproducible p-type ZnO for developing ZnO-based devices because ZnO exhibits natural n-type conductivity. There have been a number of recent reports on the synthesis of p-type ZnO doped by group-V elements (e.g., N, P, and As) substituting for O, or group-I elements (e.g., Li and Na) substituting for Zn, to realize high-quality p-type ZnO [7][8][9][10]. Among these dopants, N is a shallow acceptor and its ionic radius is very similar to that of O, unlike those of P and As.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

Kim

Leem

2015

Physica B: Condensed Matter

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“…The most likely candidates for the n-type behaviour at present are unintentional hydrogen doping [80][81] and zinc interstitial nitrogen complexes (Zni-NO) [80] . P type doping has been reported with N [84][85] ,P [86][87] ,Sb [88] , As [89][90] [91] , Ag [92] , Li [93][94] , Na [95][96] [97] dopants with variety of methods and mechanisms. Reproducibility however, has been a major problem [83] [83] , with the unintentional n-type dopants both shallow and deep usually act to compensate and counteract any intended doping [78][80] .…”

Section: General Propertiesmentioning

confidence: 99%

Flexographic printed nanogranular LBZA derived ZnO gas sensors: Synthesis, printing and processing

Lewis¹

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Within this document, investigations of the processes towards the production of a flexographic printed ZnO gas sensor for breath H2 analysis are presented. Initially, a hexamethylenetetramine (HMTA) based, microwave assisted, synthesis method of layered basic zinc acetate (LBZA) nanomaterials was investigated. Using the synthesised LBZA, a dropcast nanogranular ZnO gas sensor was produced. The testing of the sensor showed high sensitivity towards hydrogen with response (Resistanceair/ Resistancegas) to 200 ppm H2 at 328 °C of 7.27. The sensor is highly competitive with non-catalyst surface decorated sensors and sensitive enough to measure current H2 guideline thresholds for carbohydrate malabsorption (Positive test threshold: 20 ppm H2, Predicted response: 1.34). Secondly, a novel LBZA synthesis method was developed, replacing the HMTA by NaOH. This resulted in a large yield improvement, from a [OH-] conversion of 4.08 at% to 71.2 at%. The effects of [OH-]/[Zn2+] ratio, microwave exposure and transport to nucleation rate ratio on purity, length, aspect ratio and polydispersity were investigated in detail. Using classical nucleation theory, analysis of the basal layer charge symmetries, and oriented attachment theory, a dipole-oriented attachment reaction mechanism is presented. The mechanism is the first theory in literature capable of describing all observed morphological features along length scales. The importance of transport to nucleation rate ratio as the defining property that controls purity and polydispersity is then shown. Using the NaOH derived LBZA, a flexographic printing ink was developed, and proof-of-concept sensors printed. Gas sensing results showed a high response to 200 ppm H2 at 300 °C of 60.2. Through IV measurements and SEM analysis this was shown to be a result of transfer of silver between the electrode and the sensing layer during the printing process. Finally, Investigations into the intense pulsed light treatment of LBZA were conducted. The results show that dehydration at 150 °C prior to exposure is a requirement for successful calcination, producing ZnO quantum dots (QDs) in the process. SEM measurements show mean radii of 1.77-2.02 nm. The QDs show size confinement effects with the exciton blue shifting by 0.105 eV, and exceptionally low defect emission in photoluminescence spectra, indicative of high crystalline quality, and high conductivity. Due to the high crystalline quality and amenity to printing, the IPL ZnO QDs have numerous potential uses ranging from sensing to opto-electronic devices.

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Synthesis of arsenic-doped p-type ZnO films by addition of As2O3 to the ZnO spin coating solution

Cited by 8 publications

References 33 publications

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

Flexographic printed nanogranular LBZA derived ZnO gas sensors: Synthesis, printing and processing

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