Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device

Abstract

Alternating copolysiloxane with both electron donor terthiophene and electron acceptor perylenediimide derivative pendants (PTSi-alt-PDISi) is synthesized successfully. The polymer exhibits high decomposition and glass transition temperatures, good fi lm-forming ability, and high morphological stability. The estimated HOMO and LUMO energy levels of PTSi-alt-PDISi are -5.77 and -3.90 eV, respectively. The fabricated memory device with the confi guration of ITO/PTSi-alt-PDISi/Au(Al) shows nonvolatile write-once-readmany-times (WORM) memory characteristics. Its turn-on threshold voltage is 1.7 V, while its ON/OFF current density ratio is around 10 4 in ambient atmosphere. The well-defi ned memory property of PTSi-alt-PDISi is attributed to the transition of the pendant terthiophene and perylenediimide groups from the disoriented state to the ordered face-to-face conformation at the threshold voltage and the charge transfer interaction between pendent terthiophene donor and perylenediimide acceptor moieties, which are confi rmed by XRD patterns and fl uorescence emission measurement. This suggests that the new donor-acceptor polysiloxanes have potential applications in the fi eld of memory devices.

Solvents Effects on Film Morphologies and Memory Behavior of a Perylenediimide‐Containing Pendent Polymer

“…The thermal decomposition temperature ( T d , 95 wt % residual) of PNBPDI was up to 394 °C and the glass transition temperature ( T g ) could reach 150 °C. The high T d and T g values, in particular, indicate the long‐term stability of PNBPDI‐based memory devices …”

Synthesis of polymeric organic semiconductors using semifluorinated polymer precursors

“…This may be of particular use if the corresponding acrylic monomers required would exhibit markedly different kinetics if polymerized together, resulting in gradient, rather than random, copolymers. Indeed, polymeric materials with donor‐acceptor side‐chains have recently been used as emissive materials for OLEDs and as components of resistive memory …”

Organic–Inorganic Nanocomposite Film for High‐Performance Stretchable Resistive Memory Device

“…However, doping or blending systems did not guarantee 100% uniform dispersion and compatible components, and thus could lead to phase separation and ion aggregation, which were not suitable for device performances. [27] In order to improve the non-uniform dispersion by using blending or doping system, Liu et al synthesized supramolecular polystyrene-block-poly(4vinylpyridine) containing hydroxyl-functionalized ferrocene molecules, where poly(4-vinylpyridine) (P4VP) was employed as a charge-trapping element. [22][23][24][25][26] Random copolymer based nanocomposites were developed to prevent aggregation.…”

“…[22][23][24][25][26] Random copolymer based nanocomposites were developed to prevent aggregation. [27] In order to improve the non-uniform dispersion by using blending or doping system, Liu et al synthesized supramolecular polystyrene-block-poly(4vinylpyridine) containing hydroxyl-functionalized ferrocene molecules, where poly(4-vinylpyridine) (P4VP) was employed as a charge-trapping element. [27] In order to improve the non-uniform dispersion by using blending or doping system, Liu et al synthesized supramolecular polystyrene-block-poly(4vinylpyridine) containing hydroxyl-functionalized ferrocene molecules, where poly(4-vinylpyridine) (P4VP) was employed as a charge-trapping element.…”