“…It is a promising advanced ceramic material with many excellent properties such as high band gap of around 6.2 eV, high electrical resistivity (10 13 ), small dielectric constant (8.8 at 1 MHz), and low thermal expansion coefficient (which closely matched that of silicon, 4.7×10 −6 K −1 ) [1,2]. Many methods have been reported on the production of AlN powders including direct nitridation of Al metal in N 2 or NH 3 atmosphere, carbothemal reduction of Al 2 O 3 in Al 2 O 3 -C-N 2 system or Al 2 O 3 -NH 3 -C 3 H 8 system [3][4][5], vapor phase synthesis [6,7], plasma synthesis [8,9], and self-propagating high temperature synthesis [10,11]. Among them, two primary processes to manufacture AlN powders commercially are direct nitridation and carbothermal reduction [12].…”