Synthesis of Ag/Ag<sub>2</sub>S Nanoclusters Resistive Switches for Memory Cells

Abstract

Resistive switching Ag/Ag 2 S nanoclusters were formed by sulphidation of melting-dispersed thin and continuous Ag films. The morphology, structure and electrical properties of the prepared clusters were characterized by scanning (SEM), transmitting electron (TEM), scanning resistance microscopes (SRM) and Raman scattering. Hysteretic resistive switching behavior was observed in the samples that were studied with ON/OFF switching voltage equal to 8 -10 V respectively. Simple empirical numerical simulation model, based on Deal-Grove model assumptions and mechanisms, for silver nanoclusters sulphidation process, was proposed.

Recent progress in nanostructured silver sulfide: from synthesis and nonstoichiometry to properties

“…43 Nanostructured Ag 2 S can be used in photochemical cells, 44 infrared detectors, [45][46][47] in resistanceswitches and nonvolatile memory devices. [48][49][50] Ag 2 S is a promising material for conversion of solar energy into electrical energy. 51,52 Recently, three-dimensional nanoparticle superlattices were built up with Ag 2 S hollow nanospheres and nanodiscs as building blocks.…”

“…Nonvolatile memory unit represents one of the most important components in state-of-the-art microelectronic/ nanoelectronic devices and has been subject of intensive investigations in the past decades. 16,[48][49][50]181,194 Among different concepts memories, resistive switching memories, whose operation is primarily based on ion migrations that can result in reversible formation and breakage of a conductive lament in the sandwiched metal-insulator-metal structure, are particularly intriguing because they have a low production cost, offer reduced power consumption, and a switching rate as fast as semiconductor devices currently used and, in principle, can be made arbitrarily small. The Pt/Ag 2 S/Ag is an interesting structure exhibiting well-dened resistive switching behavior.…”

“…This type of heterostructures that contain Ag and Ag 2 S nanowires or an Ag lm with Ag 2 S/Ag nanoclusters are considered for the production of biosensors, 183 resistive switches, and nonvolatile memory devices. [48][49][50]194,197,199 The action of the resistive switch is based on the phase transformation between nonconducting a-Ag 2 S acanthite and superionic b-Ag 2 S argentite.…”

“…Such transformation occurring as a result of applied external electric eld was conrmed with respect to nanocrystalline Ag 2 S in studies. 49,50,194,199 The effect of an external electric eld induced abrupt disordering, allowing the realization of the superionic state of Ag 2 S at room temperature. This opens up the possibilities for the practical use of materials based on Ag 2 S.…”

“…The current-voltage I(V) characteristics of the resistive switches based on Ag 2 S/Ag heteronanostructures produced by different methods are presented in studies. [48][49][50]194,199 As a rule, the bias voltage is from AE150 to AE500 mV. According to, 49 the minimum energy barrier for an Ag cation jumping from one atomic site to the other is about 130 meV.…”