Synthesis of Absorption Reflectionless Bandstop Filter and Its Design Using Multi-Layer Self-Packaged SCPW

Xiao, Jian‐Kang; Pu, Jun

doi:10.1109/access.2020.3042617

Cited by 5 publications

(1 citation statement)

References 11 publications

(22 reference statements)

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“…By superpositioning out-of-phase RF signals from two in-parallel cascaded signal paths, a theoretically infinite rejection can be achieved in the output of these filters. Alternative ABSF topologies have been proposed to date using microstrip transmission line-based resonators [4], [5], [6], [7], [8], acoustic wave resonators [9], lumped element (LE) components [10], substrate integrated coaxial (SIC) cavities [11], [12], multilayer CPW configurations [13], and thin-film integrated devices [14]. The use of transmission line and CPW-based configurations results in large circuit volumes due to using large resonators (λ 0 /2 at the design frequency).…”

Section: Introductionmentioning

confidence: 99%

X-Band MMIC-Based Tunable Quasi-Absorptive Bandstop Filter

Zhao

Psychogiou

2023

IEEE Microw. Wireless Tech. Lett.

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This letter reports on the design and experimental testing of a new class of tunable monolithic microwave integrated circuit (MMIC)-based quasi-absorptive bandstop filters (ABSFs). An asynchronous tuning method is used to improve the design robustness and obtain an ultrahigh stopband attenuation over a wide tuning range. RF tuning is facilitated by GaAs pHEMT varactors. The proposed filter configuration exhibits the following unique features: 1) ultrahigh stopband rejection (>70 dB) despite using low quality factor lumped element (LE) resonators; 2) miniaturized footprint enabled by the GaAs MMIC process and the use of LE-based impedance inverter elements; and 3) frequency agility. An X-band filter prototype was manufactured using a commercially available GaAs process. It exhibits a high isolation notch whose center frequency can be tuned between 8.7 and 10.5 GHz while having >40-dB attenuation and a maximum attenuation of 73.6 dB.

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