Synthesis, magnetic, transport, and thermodynamic investigation of CeCo(Sb, Sn)3

Phelan, W. Adam; Nguyen, Giang V.; DiTusa, J. F.; Chan, Julia Y.

doi:10.1016/j.jallcom.2012.01.152

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…Phosphides and arsenides have been grown primarily with the use of excess tin or lead; crystals of antimonides have been isolated from reactions with antimony (self-flux) or tin. The main issue to be aware of when using tin flux to grow antimonide single crystals is that tin is oftentimes incorporated into the final product, where it can easily substitute on the antimony atomic sites because of their similar atomic radii …”

Section: Resultsmentioning

confidence: 99%

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn₂ (Pn = P, As, Sb)

et al. 2014

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Using metal fluxes, crystals of the binary osmium dipnictides OsPn2 (Pn = P, As, Sb) have been grown for the first time. Single-crystal X-ray diffraction confirms that these compounds crystallize in the marcasite structure type with orthorhombic space group Pnnm. The structure is a three-dimensional framework of corner- and edge-sharing OsPn6 octahedra, as well as [Pn2(4-)] anions. Raman spectroscopy shows the presence of P-P single bonds, consistent with the presence of [Pn2(-4)] anions and formally Os(4+) cations. Optical-band-gap and high-temperature electrical resistivity measurements indicate that these materials are narrow-band-gap semiconductors. The experimentally determined Seebeck coefficients reveal that nominally undoped OsP2 and OsSb2 are n-type semiconductors, whereas OsAs2 is p-type. Electronic band structure using density functional theory calculations shows that these compounds are indirect narrow-band-gap semiconductors. The bonding p orbitals associated with the Pn2 dimer are below the Fermi energy, and the corresponding antibonding states are above, consistent with a Pn-Pn single bond. Thermopower calculations using Boltzmann transport theory and constant relaxation time approximation show that these materials are potentially good thermoelectrics, in agreement with experiment.

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Section: Resultsmentioning

confidence: 99%

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn₂ (Pn = P, As, Sb)

et al. 2014

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Anisotropic magnetization and resistivity of single crystalline RNi1−xBi2±y (R=La–Nd, Sm, Gd–Dy)

Lin¹,

Straszheim²,

Bud’ko³

et al. 2013

Journal of Alloys and Compounds

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We present a detailed study of RNi 1−x Bi 2±y (R = La-Nd, Sm, Gd-Dy) single crystals by measurements of stoichiometry and temperature dependent magnetic susceptibility, magnetization, and electrical resistivity. This series forms with partial Ni occupancy as well as a variable Bi occupancy. For R = Ce-Nd, Gd-Dy, the RNi 1−x Bi 2±y compounds show local-moment like behavior and order antiferromagnetically at low temperatures. Determination of anisotropies as well as antiferromagnetic ordering temperatures for RNi 1−x Bi 2±y (R = Ce-Nd, Sm, Gd-Dy) have been made. Although crystalline samples from this family exhibit minority, second phase superconductivity at low temperatures associated with Ni-Bi and Bi contamination, no evidence of bulk superconductivity has been observed.

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Standard methods for heat capacity measurements on a Quantum Design Physical Property Measurement System

Rosen

Woodfield

2020

The Journal of Chemical Thermodynamics

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Synthesis, magnetic, transport, and thermodynamic investigation of CeCo(Sb, Sn)3

Cited by 4 publications

References 29 publications

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn₂ (Pn = P, As, Sb)

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn₂ (Pn = P, As, Sb)

Anisotropic magnetization and resistivity of single crystalline RNi1−xBi2±y (R=La–Nd, Sm, Gd–Dy)

Standard methods for heat capacity measurements on a Quantum Design Physical Property Measurement System

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Synthesis, magnetic, transport, and thermodynamic investigation of CeCo(Sb, Sn)3

Cited by 4 publications

References 29 publications

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn2 (Pn = P, As, Sb)

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn2 (Pn = P, As, Sb)

Anisotropic magnetization and resistivity of single crystalline RNi1−xBi2±y (R=La–Nd, Sm, Gd–Dy)

Standard methods for heat capacity measurements on a Quantum Design Physical Property Measurement System

Contact Info

Product

Resources

About

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn₂ (Pn = P, As, Sb)

Crystal Growth and Characterization of the Narrow-Band-Gap Semiconductors OsPn₂ (Pn = P, As, Sb)