Synthesis, local structure and optical property studies of α-SnS microrods by synchrotron X-ray pair distribution function and micro-Raman shift

Gawai, U. P.; Gaikwad, D.K.; Patil, Sharda; Pandey, K. K.; Lalla, N. P.; Dole, B. N.

doi:10.1039/d0ra03586f

Cited by 5 publications

(4 citation statements)

References 41 publications

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“…The broad peak at 617 cm −1 may be caused by the deformation mode of sulfate in SnS, while the Raman peaks at 93 and 232 cm −1 are attributed to transverse and longitudinal optical A g vibrational modes and 309 cm −1 relates to A 1g modes of vibration. 78 Additionally, Figure 3g clearly illustrates the successful doping of magnesium ions in the SnS lattice, as sequential red shifts are seen with the introduction of the Mg element into the SnS framework. Further, no additional, unidentified peaks of the magnesium sulfide and sulfide phases were seen in the Raman spectra, indicating both the purity and the successful doping of Mg in the SnS lattice.…”

Section: Resultsmentioning

confidence: 94%

“…The Raman spectra of pure SnS and Mg–SnS with various levels of doping are shown in Figure g, where four main peaks are seen at 93, 232, 309, and 617 cm –1 . The broad peak at 617 cm –1 may be caused by the deformation mode of sulfate in SnS, while the Raman peaks at 93 and 232 cm –1 are attributed to transverse and longitudinal optical A g vibrational modes and 309 cm –1 relates to A 1g modes of vibration . Additionally, Figure g clearly illustrates the successful doping of magnesium ions in the SnS lattice, as sequential red shifts are seen with the introduction of the Mg element into the SnS framework.…”

Section: Resultsmentioning

confidence: 99%

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Flexible and Hand-Printed Photodetector Based on Mg–SnS Nanoflakes

Shah,

Pataniya,

Som

et al. 2024

ACS Appl. Nano Mater.

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High-performance photodetection is becoming increasingly important for the advancement of technology. Very few materials are available that can respond to light across the ultraviolet to the infrared (IR) range. These materials are very much required for optoelectronic devices. Two-dimensional (2D) layered materials became relevant following the discovery of graphene. Transition-metal chalcogenides belong to the 2D layered material class, as well. The field of optoelectronic applications makes extensive use of them. The current study investigated the photodetector device by doping pure SnS nanoflakes with Fe, Mn, Mg, Pd, and W. These materials were used to create paper-based, flexible, biodegradable electronics through a solvent-free hand-print technique. The Mgdoped SnS photodetector has the highest photo response performance among the devices. With a specific detectivity value of 1.64 × 10 10 Jones and a responsivity value of 52 mA W −1 , the 7% Mg-doped SnS exhibits the best response among the different Mg doping. Extensive on−off cycles were used to assess the switching stability of the device, observing clear photo response and photoswitching behavior. The photoswitching curves of the device as created and the device after 8 months show an amazing degree of consistency, indicating the device's resilience in open-air environments. The device was bent repeatedly to test its twisting, foldability, and flexibility. It continuously displayed a definite photoswitching trend. Testing in a very basic and acidic environment verified the device's chemical stability, and its photo response and photoswitching functions remain functional. When the paperbased photodetector's thermal stability was examined at various temperatures, the findings demonstrated that the device continues to function normally and produce photocurrent. Considering how quickly technology is developing nowadays and how much waste is produced by electronics, switching to paper-based gadgets could help achieve sustainability goals.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Flexible and Hand-Printed Photodetector Based on Mg–SnS Nanoflakes

Shah,

Pataniya,

Som

et al. 2024

ACS Appl. Nano Mater.

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“…In a similar fashion, the characteristic peaks of π-SnS correlate with the database of JCPDS card no. 77–3356, and the peaks at 26, 30.8, 31.9, 32.8, 44.2, 50.57, and 52.38° correspond to the (222), (400), (410), (440), (540), and (622) planes, respectively. − As for β-SnS, the distinctive peaks at 26.5, 31.6, 39.2, 44.4, and 52.5° are indicative of the (021), (111), (131), (150), and (211) diffraction planes, respectively, which are in good agreement with data provided by JCPDS card no. 83–1758. − A comparative table (Table ST1) has been given in the Supporting Information regarding the lattice parameters and interlayer spacing of the three phases corresponding to their major peaks.…”

Section: Resultsmentioning

confidence: 99%

Phase-Engineered Tin Sulfides and Their Heterostructure with Ti₃C₂T_x MXene for All-Solid-State Flexible Asymmetric Supercapacitors

Patra,

Hegde,

Mahamiya

et al. 2024

ACS Appl. Nano Mater.

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Despite supercapacitors' high-power density and rapid charge transfer, limitations in energy density and stability drive research into cost-effective, efficient electrode materials. Emerging two-dimensional materials, especially transition metal sulfides, are of significant interest due to their tunable properties. Strategies such as phase engineering, defect creation, heterostructure formation, and advanced synthesis methods refine the electrochemical properties. In this study, different phases of tin sulfide, including α-SnS, π-SnS, and β-SnS, were effectively synthesized through hydrothermal and wet chemical methodologies. Following comprehensive characterization, electrochemical analysis offered valuable insights into the electrochemical behavior of each phase, notably showcasing superior performance in β-SnS to α-SnS and π-SnS. To further augment the electrochemical capabilities of β-SnS, a heterostructure was synthesized incorporating Ti 3 C 2 T x MXene. The heterostructure displayed an exceptional capacitance of 615 mF/cm 2 at a flow rate of 4 mA/cm 2 . This heterostructure was then employed in fabricating an asymmetric supercapacitor (β-SnS/Ti 3 C 2 T x //Ti 3 C 2 T x ) operated at 1.5 V, displaying a high areal capacitance of 109 mF/cm 2 along with the energy density and power density of 34.06 μWh/cm 2 and 6.28 mW/cm 2 , respectively. With amazing cycling stability, the electrochemical performance and structural properties were corroborated through density functional theoretical simulations.

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“…Out of which, 4A g , 2B 1g , 4B 2g, and 2B 3g are identified to be the Raman active [41] modes, 7 modes correspond to the IR active (3B 1u , 1B 2u , 3B 3u ), and the remaining two modes are Raman inactive (2A u ) modes [42]. The Raman spectra of the prepared SnS thin films exhibit three prominent Raman modes of orthorhombic SnS around…”

Section: Xrd and Raman Analysismentioning

confidence: 99%

Effect of SnS thin film thickness on visible light photo detection

Alagarasan¹,

Hegde²,

Varadharajaperumal³

et al. 2022

Phys. Scr.

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In this study, SnS thin films of various thicknesses (500 nm- 700 nm) were prepared by the thermal evaporation technique for potential photodetector application. High purity SnS prepared at 1000oC is used to deposit thin films at room temperature. The prepared SnS thin films were characterized to assess the thickness effect on the crystallite size, morphology, transmittance, band gap, and photo-sensing properties. SnS pure phase confirmed through XRD and Raman spectral analysis. Among the fabricated SnS thin films, the sample having a thickness of 650 nm showed better crystallinity with higher crystallite size and preferred orientation of crystallites. SnS grew plate-like-columnar grain morphology of different widths and thicknesses which is confirmed by FESEM results. The UV–Vis studies showed a minimum band gap value obtained for 650 nm thickness film. The 650 nm thickness SnS films have a highest photo response of 6.72 ×10-1 AW-1, external quantum efficiency (EQE) of 157%, and detectivity of 14.2 ×109 Jones. The transient photo-response analysis showed the 650 nm SnS thin film has a 5.3 s rise and 5.1 s fall duration, which is better suitable for photodetector applications compared to other samples.

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Synthesis, local structure and optical property studies of α-SnS microrods by synchrotron X-ray pair distribution function and micro-Raman shift

Abstract: The PDF refinement shows layer structure of SnS-A with two distinct bond lengths, one nearly parallel to the ‘a’ axis and another perpendicular to the ‘a’ axis, it corresponds to bond lengths of 2.62528 (38) Å and 2.66204 (03) Å.

Cited by 5 publications

References 41 publications

Flexible and Hand-Printed Photodetector Based on Mg–SnS Nanoflakes

Flexible and Hand-Printed Photodetector Based on Mg–SnS Nanoflakes

Phase-Engineered Tin Sulfides and Their Heterostructure with Ti₃C₂T_x MXene for All-Solid-State Flexible Asymmetric Supercapacitors

Effect of SnS thin film thickness on visible light photo detection

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Synthesis, local structure and optical property studies of α-SnS microrods by synchrotron X-ray pair distribution function and micro-Raman shift

Abstract: The PDF refinement shows layer structure of SnS-A with two distinct bond lengths, one nearly parallel to the ‘a’ axis and another perpendicular to the ‘a’ axis, it corresponds to bond lengths of 2.62528 (38) Å and 2.66204 (03) Å.

Cited by 5 publications

References 41 publications

Flexible and Hand-Printed Photodetector Based on Mg–SnS Nanoflakes

Flexible and Hand-Printed Photodetector Based on Mg–SnS Nanoflakes

Phase-Engineered Tin Sulfides and Their Heterostructure with Ti3C2Tx MXene for All-Solid-State Flexible Asymmetric Supercapacitors

Effect of SnS thin film thickness on visible light photo detection

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Product

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Phase-Engineered Tin Sulfides and Their Heterostructure with Ti₃C₂T_x MXene for All-Solid-State Flexible Asymmetric Supercapacitors