2013
DOI: 10.1016/j.optlastec.2012.11.004
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Synthesis, diffused reflectance and electrical properties of nanocrystalline Fe-doped ZnO via sol–gel calcination technique

Abstract: a b s t r a c tThe nanocrystalline ZnO:Fe semiconductor oxides were successfully synthesized via the sol-gel calcination method. Structural, optical and electrical properties of the investigated samples were characterized by various techniques such as atomic force microscopy (AFM), UV-vis absorption and electrical transport measurements. The optical band gap for undoped ZnO (3.19 eV) decreases (2.75 eV) with increasing Fe-doped ZnO (20%). The temperature dependences of the electrical conductivities of undoped … Show more

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Cited by 205 publications
(84 citation statements)
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“…Lower band gap value (Eg) of pure and doped ZnO sample compared to bulk ZnO (3.39 eV) might be due to the presence of oxygen vacancy defects, which is in good agreement with the Eg value determined in the literature [24,25]. From Table 4 and Table 5, it is seen that the band gap energy decreases with the increase in calcination temperature due to the increase in the particle size as has also been evident from the XRD results.…”
Section: Optical Absorption Studysupporting
confidence: 89%
“…Lower band gap value (Eg) of pure and doped ZnO sample compared to bulk ZnO (3.39 eV) might be due to the presence of oxygen vacancy defects, which is in good agreement with the Eg value determined in the literature [24,25]. From Table 4 and Table 5, it is seen that the band gap energy decreases with the increase in calcination temperature due to the increase in the particle size as has also been evident from the XRD results.…”
Section: Optical Absorption Studysupporting
confidence: 89%
“…and II, we calculate the absorption index (k) which depends on the diused reectance data from the equation k = αλ/4π [23]. By plotting of the absorption index against wavelength is shown in Fig.…”
Section: Optical Properties Of Potassium Nitrate (Kno 3 )mentioning
confidence: 99%
“…ZnO has become one of the most popular materials for electrical and optical applications over the time. It is promising material for many optoelectronic applications such as ultraviolet lasers, light-emitting diodes, p-n junction devices, thinfilm transistor, solar cells, acoustic devices, chemical and biological sensors [12]. In order to obtain better crystallization quality and better optical and electrical properties, researchers have performed doping in metal oxides.…”
Section: Introductionmentioning
confidence: 99%