2019
DOI: 10.1016/j.jssc.2019.02.039
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Synthesis, crystallographic structure and thermodynamic properties of T2-Al2MgC2

Abstract: T2-Al2MgC2 was synthesized from the elements in a Mg-Al melt at 1000°C using sealed Ta crucibles. Single crystals of T2-Al2MgC2 were extracted by evaporating the Mg-Al matrix. The crystal structure of T2-Al2MgC2 was refined for the first time on the basis of single-crystal X-ray diffraction. The crystal is trigonal (space group P-3m1, Z=1) with lattice parameters of a=3.3767(11) Å, c=5.807(2) Å and V=57.34(5) Å 3. Based on the refined crystal structure, DFT calculations were conducted to evaluate the thermodyn… Show more

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Cited by 10 publications
(26 citation statements)
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“…On the one hand, there is the prospect of an application of Al-C-Mg carbides in electronic. Al4C3 and Al2MgC2 are semiconductors with an indirect band gap calculated by DFT at respectively 1.34 [1] and 1.73 eV [2], although it is to be noted that those values are very likely to be underestimated. Plus, Al4C3 can contain a significant amount of Mg in solid solution [2,3] pointing to the possibility of a p-type doping.…”
Section: Introductionmentioning
confidence: 99%
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“…On the one hand, there is the prospect of an application of Al-C-Mg carbides in electronic. Al4C3 and Al2MgC2 are semiconductors with an indirect band gap calculated by DFT at respectively 1.34 [1] and 1.73 eV [2], although it is to be noted that those values are very likely to be underestimated. Plus, Al4C3 can contain a significant amount of Mg in solid solution [2,3] pointing to the possibility of a p-type doping.…”
Section: Introductionmentioning
confidence: 99%
“…Al4C3 and Al2MgC2 are semiconductors with an indirect band gap calculated by DFT at respectively 1.34 [1] and 1.73 eV [2], although it is to be noted that those values are very likely to be underestimated. Plus, Al4C3 can contain a significant amount of Mg in solid solution [2,3] pointing to the possibility of a p-type doping. Finally, the hexagonal structure of Al4C3 and Al2MgC2 suggests a good compatibility with the 4H polytype of SiC in the scope of making heterojunctions by epitaxial growth.…”
Section: Introductionmentioning
confidence: 99%
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