1998
DOI: 10.1002/(sici)1521-3749(199808)624:8<1285::aid-zaac1285>3.0.co;2-5
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Synthesis, Crystal Structures, and Optical Properties of New Quaternary Metal Chalcogenides of Group 5: Cs2AgVS4, K2AgVSe4, Rb2AgVSe4, Rb2AgNbS4, and Cs2AgNbSe4

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Cited by 47 publications
(18 citation statements)
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“…The steep slope of the optical absorption edges for complex1 is indicative of the existence of direct transitions [48]. It should be pointed out that the energy band gap of 3.60 eV of complex 1is obviously larger than those of CuInS 2 (1.55 eV), CdTe (1.5 eV), CuInSe 2 (1.04 eV), and GaAs (1.4 eV), all of them are highly efficient photovoltaic materials [49][50]. The wide optical band gap of 3.60 eVof complex 1 is probably because of the 4,4'-Hbipy moieties which is an organic ligand and can enlarge the optical band gap.…”
Section: Semiconductive Propertiesmentioning
confidence: 99%
“…The steep slope of the optical absorption edges for complex1 is indicative of the existence of direct transitions [48]. It should be pointed out that the energy band gap of 3.60 eV of complex 1is obviously larger than those of CuInS 2 (1.55 eV), CdTe (1.5 eV), CuInSe 2 (1.04 eV), and GaAs (1.4 eV), all of them are highly efficient photovoltaic materials [49][50]. The wide optical band gap of 3.60 eVof complex 1 is probably because of the 4,4'-Hbipy moieties which is an organic ligand and can enlarge the optical band gap.…”
Section: Semiconductive Propertiesmentioning
confidence: 99%
“…The steep slope of the optical absorption edge of 1 is indicative of the existence of a direct transition, while the slow slope of the optical absorption edge of 2 is indicative of the existence of an indirect transition [39]. The band-gaps of 1 and 2 are larger than those of CdTe (1.5 eV), GaAs (1.4 eV), CuInS 2 (1.55 eV), CdSe (1.75 eV) and CdS (2.42 eV), all of which are highly efficient photovoltaic materials, but smaller than the band gap of LiNbO 3 (3.5 eV) [40][41][42][43].…”
Section: Zn 6 S 5 CLmentioning
confidence: 99%
“…The one-dimensional infinite linear chains comprise the sharing of edges by successive V(1)Se 4 and V(2)Se 4 tetrahedra (Fig. 2) and hence may be written as [10]. The edge sharing of the VSe 4 tetrahedra in RbVSe 2 leads to a V-V distance of only 2.8362(4) Å , which is comparable to those of 2.8084(3) Å in the non-ferromagnetic phase of BaVS 3 [3], 2.8105(4) Å in the ferromagnetic phase of BaVS 3 [3], and 2.9310(7) Å in BaVSe 3 [6].…”
Section: Crystal Structurementioning
confidence: 99%
“…These possess a structure comprising one-dimensional 1 1 ½MM 0 Se 2À 4 chains of edge-sharing MQ 4 and M 0 Q 4 tetrahedra. In this subgroup there are eight V/S or V/Se compounds, namely K 2 CuVS 4 [7], Rb 2 CuVS 4 [8], K 2 CuVSe 4 [8], K 2 AgVS 4 [9], Rb 2 AgVS 4 [9], Cs 2 AgVS 4 [10], K 2 AgVSe 4 [8], and Rb 2 AgVSe 4 [10]. However, there appear to be no compounds of formula A 2 V 2 Q 4 , that is AVQ 2 , that crystallize in space group Fddd.…”
Section: Introductionmentioning
confidence: 99%