Synthesis, characterization and opto-electrical properties of ternary Zn₂SnO₄nanowires

Abstract

Ternary oxides have the potential to display better electrical and optical properties than the commonly fabricated binary oxides. In our experiments, Zn(2)SnO(4) (ZTO) nanowires were synthesized via thermal evaporation and vapor phase transport. The opto-electrical performance of the nanowires was investigated. An individual ZTO nanowire field-effect transistor was successfully fabricated for the first time and shows an on-off ratio of 10(4) and transconductance of 20.6 nS, which demonstrates the promising electronic performance of ZTO nanowire in an electrical device. Field emission experiments on ZTO nanowire film also indicate their potential application as a field emission electron source.

Highly porous Zinc Stannate (Zn2SnO4) nanofibers scaffold photoelectrodes for efficient methyl ammonium halide perovskite solar cells

“…In order to further confirmation, we have recorded micro-Raman spectrum of Zn 2 SnO 4 -700 sample (Figure 3). The strong Raman shift peaks at 669.1(A1g), 530.2(F2g)and 435.85(Eg) cm −1 corresponding to well-known Zn 2 SnO 4 peaks252829. No additional secondary phase of ZnO is observed.…”

Reduced graphene oxide (rGO) grafted zinc stannate (Zn2SnO4) nanofiber scaffolds for highly efficient mixed-halide perovskite solar cells

“…This n-type semiconductor TMO having a small electron effective mass of 0.23 m e and a high-electron Hall mobility of 10-30 cm 2 Vs -1 . [17][18][19][20][21] The charge injection and electron diffusion efficiency of this material is much faster than the TiO 2 -based photoanodes. On the other hand, the wide band gap (3.7eV) reduces photobleaching and presents a lower electron-triiodide recombination rate.…”

High-temperature solid-state reaction induced structure modifications and associated photoactivity and gas-sensing performance of binary oxide one-dimensional composite system

“…15, 45 The work function value of ZnO is higher than that of SnO 2 and ZTO; accordingly, when the heterostructure was formed, a thin depletion layer was expected to form in the SnO 2 and ZTO shell layers and an electron accumulation layer in the ZnO core;…”