1998
DOI: 10.1016/s0925-8388(98)00585-4
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Synthesis, characterization, and electronic structure of KV3Te3O0.42

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1998
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Cited by 7 publications
(9 citation statements)
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“…These two changes together release the internal stress and stabilize the compound. Note that this result is quantitatively in agreement with the previous study by Wu et al…”
Section: Resultssupporting
confidence: 93%
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“…These two changes together release the internal stress and stabilize the compound. Note that this result is quantitatively in agreement with the previous study by Wu et al…”
Section: Resultssupporting
confidence: 93%
“…First, our 300 K resistivities are low, 5.1, 3.8, and 3.8 × 10 –4 Ω cm for KV 3 Te 3 O 0.33 , RbV 3 Te 3 O 0.32 , and CsV 3 Te 3 O 0.35 , respectively, and are of the same order as KV 3 Se 3 and all other TlFe 3 Te 3 -type compounds (∼10 –4 Ω cm). Note that our values are several orders of magnitude smaller than those measured by Wu et al using a two-probe method on KV 3 Te 3 O 0.42 at 298 K (∼41.6 Ω cm) . Here, all three tellurides exhibit a metal–semiconductor-metal transition identified by the change is sign of dρ­( T )/d T .…”
Section: Resultscontrasting
confidence: 71%
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“…[OV 6 ] octahedra which are stabilized by m 4 -Te 2-and m 3 -Se 2-are found in KV 3 Te 3 O 0.42 (14) and V 6 Se 8 O(PMe 3 ) 6 (15), respectively.…”
Section: Introductionmentioning
confidence: 99%