2016
DOI: 10.1016/j.jcrysgro.2015.12.005
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Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(Se S1−)2

Abstract: Silicon dichalcogenides have an intriguing crystal structure consisting of long tetrahedral chains held together by van der Waals forces but the electronic and optical properties have been less explored. In the present work, bulk SiSe 2 , SiS 2 , and Si(Se x S 1-x) 2 were synthesized by the congruent melt growth method and characterized by Raman spectroscopy, X-ray Diffraction and UV/visible/IR transmission measurements supported by first-principles calculations. First-principles calculations reveal a nearly l… Show more

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Cited by 15 publications
(16 citation statements)
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“…Note that MoS 2 is moisture stable due to the positive reaction Gibbs energy for "MoS 2 (s) + 2 H 2 O (g) → MoO 2 (s) + 2 H 2 S (g)", unlike the moisture unstable compounds ZrS 2 and Si(S,Se) 2 . 34,41 According to thermodynamics, the final reaction products can be predicted via equilibrium calculations by minimizing the Gibbs energy. Figure 6b shows that MoS 2 and gas are the products under the S-rich condition at high temperatures (Case 1), while the final In summary, an integrated DFT calculation and CALPHAD modeling approach has been employed in the present work to understand the lateral versus vertical growth of the prototypical 2D material MoS 2 and provide pressure−temperature− composition (P-T-x) growth windows for the layer-thicknessdependent MoS 2 layers and the 2D lateral size-dependent MoS 2 flakes.…”
Section: Nano Lettersmentioning
confidence: 99%
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“…Note that MoS 2 is moisture stable due to the positive reaction Gibbs energy for "MoS 2 (s) + 2 H 2 O (g) → MoO 2 (s) + 2 H 2 S (g)", unlike the moisture unstable compounds ZrS 2 and Si(S,Se) 2 . 34,41 According to thermodynamics, the final reaction products can be predicted via equilibrium calculations by minimizing the Gibbs energy. Figure 6b shows that MoS 2 and gas are the products under the S-rich condition at high temperatures (Case 1), while the final In summary, an integrated DFT calculation and CALPHAD modeling approach has been employed in the present work to understand the lateral versus vertical growth of the prototypical 2D material MoS 2 and provide pressure−temperature− composition (P-T-x) growth windows for the layer-thicknessdependent MoS 2 layers and the 2D lateral size-dependent MoS 2 flakes.…”
Section: Nano Lettersmentioning
confidence: 99%
“…Figure a shows that the lowest reaction Gibbs energy is for the reaction “Mo (s) + 2 S (g) → MoS 2 (s)” and the most possible reaction from MoO 3 /MoO 2 to MoS 2 is “MoO 2 (s) + 2 S (g) → MoS 2 (s) + O 2 (g)”, where the letters “s” and “g” indicate solid and gas phase, respectively. Note that MoS 2 is moisture stable due to the positive reaction Gibbs energy for “MoS 2 (s) + 2 H 2 O (g) → MoO 2 (s) + 2 H 2 S (g)”, unlike the moisture unstable compounds ZrS 2 and Si­(S,Se) 2 . , According to thermodynamics, the final reaction products can be predicted via equilibrium calculations by minimizing the Gibbs energy. Figure b shows that MoS 2 and gas are the products under the S-rich condition at high temperatures (Case 1), while the final products are MoO 2 , MoS 2 , and gas under the S-lean condition (Case 2).…”
Section: Energetics Of Layer-dependent Mos2 From Dftmentioning
confidence: 99%
“…91 layered antimony telluride, 92 Phonon transport in SrTiO 3 , 93 self-consistent phonon calculations for cubic SrTiO 3 (ref. 94) and Si(Se x S 1 − x ) 2 95.…”
mentioning
confidence: 99%
“…Accordingly, the 29 Si isotropic line shapes are simulated with four components centered at −89, −59, and −28, and −17 ppm (Figure 6 and Table 3). The first three components can be readily assigned, on the basis of previous 29 Si MAS NMR studies on various crystalline SiSe 2 polymorphs, 20 to tetrahedral Si sites that belong to the E 2 , E 1 , and E 0 environments (Figure 1), respectively. The Δ for these environments progressively increase with increasing degree of edge sharing (Table 2).…”
Section: Resultsmentioning
confidence: 99%