Synthesis, Characterization, and Application of Novel Ni-P-Carbon Nitride Nanocomposites

Abstract

Dispersion of 2D carbon nitride (C 3 N 4 ) nanosheets into a nickel phosphorous (NiP) matrix was successfully achieved by ultrasonication during the electroless plating of NiP from an acidic bath. The morphology and thickness, elemental analysis, phases, roughness, and wettability for as-plated and heat-treated nanocomposite were determined by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurements, respectively. C 3 N 4 showed a homogeneous distribution morphology in the nanocomposite that changed from amorphous in case of the NiP to a mixed crystalline-amorphous structure in the NiP-C 3 N 4 nanocomposite. The microhardness and corrosion resistance of the as-plated nanocomposite and the heat-treated nanocomposite coating were significantly enhanced compared to the Ni-P. The nanocomposite showed a superior corrosion protection efficiency of~95%, as observed from the electrochemical impedance spectroscopy (EIS) measurements. On the other hand, the microhardness of the nanocomposite was significantly increased from 780 to reach 1175 HV 200 for NiP and NiP-C 3 N 4 , respectively.

Corrosion and Heat Treatment Study of Electroless NiP-Ti Nanocomposite Coatings Deposited on HSLA Steel

“…The deviation from ideal behavior is expressed by the exponent n (0 ≤ n ≤ 1). The ideal resistor is indicated when n equals zero, whereas the ideal capacitor is acted when n equals 1 [ 44 , 45 ].…”

New Electrospun Polystyrene/Al2O3 Nanocomposite Superhydrophobic Coatings; Synthesis, Characterization, and Application

“…The capacitances are substituted by constant phase elements (C dl1 and C dl2 ) to give a more precise fit to the experimental outcomes. The exponent (0 ≤ n ≤ 1) represents deviation from an ideal dielectric behavior; if n = 0, it shows an ideal resistor, and if n = 1, it acts as an ideal capacitor [57][58][59][60][61][62][63][64]. It is noticed that the R po and R ct significantly increase as the WCA increases.…”

Regenerable g-C3N4–chitosan beads with enhanced photocatalytic activity and stability

“…[24][25][26][27][28] Compared with traditional inorganic semiconductors, g-C 3 N 4 possesses a narrow band gap of $2.7 eV, [29][30][31][32] good resistance to thermal and chemical damage (acid, base and organic solvent), 4,33 and visible absorption at approximately 450-460 nm. [34][35][36] Nevertheless, in the stability experiment, there is a problem of mass loss due to the powdered g-C 3 N 4 . [37][38][39] In addition, g-C 3 N 4 has general adsorption properties on account of the structure.…”