Synthesis and transport property of AgSbTe2 as a promising thermoelectric compound

Wang, Heng; Li, Jing‐Feng; Zou, Minmin; Sui, Tao

doi:10.1063/1.3029774

Cited by 105 publications

(111 citation statements)

References 18 publications

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“…A relaxation-time model for electrical carrier-interface scattering was developed to account for the fi ltering eff ect of low-energy electrons on transport properties. Tl x Pb 1-x Te [17] AgSbTe 2 [14] Ag-Pb-Sb-Te (LAST) [15] (GeTe) 1-x (AgSbTe 2 ) x (TAGS) [16] CsBi 4 Te 6 [12] Yb x Co 4 Sb 12 (skutterudites) [18] SiGe [19] Yb x Ba 8-x Ga 16 Ge 30 (clathrates) [25] Hf 0.6 Zr 0.4 NiSn 0.98 Sb 0.02 (half-Heusler) [24] Yb 14 Mn 1-x Al x Sb 11 (Zintl phase) [23] Temperature ( n-type (Mg 2 Si y Ge 1-y )-(Mg 2 Si 0.6 Ge 0.4 ) nanocomposites. Th e inspired work of Kanatzidis's group revealed that a new kind of intrinsic nano-inclusion, as shown schematically in Figure 3(k), formatted by the segregation of silver and antimony in the lead sublattice of PbTe, could achieve simultaneous phonon blocking and electron transmission.…”

Section: Nanostructural Approaches For Enhancing Thermoelectric Perfomentioning

confidence: 99%

“…Th eir microstructural analysis revealed that the high ZT value is partially attributable to a signifi cant decrease in κ lat due to scattering at the grain boundary and the presence of nano-precipitates [49]. Tang et al [14] developed a melt-quench-anneal-spark plasma sintering method to form bulk nanostructural p-type Bi 0.52 Sb 1.48 Te 3 with a ZT value at of 1.56 at 300 K. Cao et al [50] obtained a maximum ZT of 1.47 at ca. 438 K for Bi 2 Te 3 /Sb 2 Te 3 bulk nanocomposites with laminated nanostructures using a simple route involving hydrothermal synthesis and hot pressing.…”

Section: Bi 2 Te 3 -Based Alloysmentioning

confidence: 99%

“…Due to the special nanostructure,Ag 1-x Pb 18 SbTe 20 showed a very high ZT value of 2.2 at 800 K. Although lower ZT values of 1.5-1.7 were confi rmed in a subsequent report [62], the same study suggest that this serial compound is still the most competitive TE material. Kanatzidis's work has ignited broad research interest on the LAST system [14,[62][63][64][65].…”

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

“…As a result, a signifi cantly improved ZT value of 1.5 was obtained at 703 K. Th e LAST system can also be regarded as a nanocomposite with AgPbTe 2 nano-phase dispersed in a PbTe matrix. Recently, Wang et al [14] successfully synthesized bulk single-phase AgSbTe 2 by MA-SPS. Th e material displayed an extremely low κ value (0.3 W m -1 K -1 ) and high ZT value of 1.59 at 673 K.…”

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

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High-performance nanostructured thermoelectric materials

et al. 2010

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T he conversion of thermal energy to electrical energy is known as thermoelectric (TE) conversion. Th e TE eff ect can be used for both power generation and electronic refrigeration. When a temperature gradient (ΔT ) is applied to a TE couple consisting of n-type (electron-transporting) and p-type (hole-transporting) elements, the mobile charge carriers at the hot end tend to diff use to the cold end, producing an electrostatic potential (ΔV ). Th is characteristic, known as the Seebeck eff ect, where α = ΔV/ΔT is defi ned as the Seebeck coeffi cient, is the basis of TE power generation, as shown in Figure 1(a). Conversely, when a voltage is applied to a TE couple, the carriers attempt to return to the electron equilibrium that existed before the current was applied by absorbing energy at one connector and releasing it at the other, an eff ect known as the Peltier eff ect, as shown in Figure 1(b). Th ermoelectric technology and solid-state devices based on the TE eff ect have a number of advantages, including having no moving parts, and being reliable and scalable. Th e technology has therefore arouse worldwide interest in many fi elds, including waste heat recovery and solar heat utilization (power generation mode), and temperature-controlled seats, portable picnic coolers and thermal management in microprocessors (active refrigeration mode) [1].Th e effi ciency of TE devices is strongly associated with the dimensionless fi gure of merit (ZT) of TE materials, defi ned as ZT = (α 2 σ/κ)T, where σ, κ and T are the electrical resistivity, thermal conductivity and absolute temperature [2]. High electrical conductivity (corresponding to low Joule heating), a large Seebeck coeffi cient (corresponding to large potential diff erence) and low thermal conductivity (corresponding to a large temperature diff erence) are therefore necessary in order to realize high-performance TE materials. Th e ZT fi gure is also a very convenient indictor for evaluating the potential effi ciency of TE devices. In general, good TE materials have a ZT value of close to unity. However, ZT values of up to three are considered to be essential for TE energy converters that can compete on effi ciency with mechanical power generation and active refrigeration.High-performance TE materials have been pursued since Bi 2 Te 3 -based alloys were discovered in the 1960s. Until the end of last century, moderate progress had been made in the development of TE materials. Th e benchmark of ZT ≈ 1 was broken in the mid-1990s by two Tsinghua University, China Thermoelectric eff ects enable direct conversion between thermal and electrical energy and provide an alternative route for power generation and refrigeration. Over the past ten years, the exploration of high-performance thermoelectric materials has attracted great attention from both an academic research perspective and with a view to industrial applications. This review summarizes the progress that has been made in recent years in developing thermoelectric materials with a high dimensionless fi gure of...

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Section: Nanostructural Approaches For Enhancing Thermoelectric Perfomentioning

confidence: 99%

Section: Bi 2 Te 3 -Based Alloysmentioning

confidence: 99%

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

Section: Cosb 3 -Based Skutteruditesmentioning

confidence: 99%

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High-performance nanostructured thermoelectric materials

et al. 2010

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“…Alternatively, high-performance single-phase thermoelectric materials can be obtained using materials with intrinsically low lattice thermal conductivities. Typical materials included in this class are as follows: AgSbTe 2 (kB0.39 Wm À1 K À1 , ZTB1.6 at 673 K), 10,11 Ag 9 TlTe 5 (kB0.22 Wm À1 K À1 , ZTB1.2 at 700 K), 12 Ag 0.95 GaTe 2 (kB0.20 Wm À1 K À1 , ZTB0.7 at 850 K), 13 Ag 3.9 Mo 9 Se 11 (kB0.75 Wm À1 K À1 , ZTB0.6 at 800 K), 14 Cu 3 SbSe 4 (kB0.50 Wm À1 K À1 , ZTB0.8 at 650 K), 15 Cu 2 Ga 4 Te 7 (kB0.67 Wm À1 K À1 , ZTB0.6 at 940 K), 16 Cu 2.1 Zn 0.9 SnSe 4 (kB0.50 Wm À1 K À1 , ZTB0.9 at 860 K), 17 Cu 2 Ga 0.07 Ge 0.93 Se 3 (kB0.67 Wm À1 K À1 , ZTB0.5 at 745 K), 18 CsBi 4 Te 6 (kB0.50 Wm À1 K À1 , ZTB0.8 at 275 K), 19 and K 2 Bi 8 Se 13 (kB0.80 Wm À1 K À1 , ZTB0.4 at 400 K). 20 Recently, we reported a quaternary BiCuSeO compound that exhibits very low thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

High thermoelectric performance of oxyselenides: intrinsically low thermal conductivity of Ca-doped BiCuSeO

et al. 2013

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We report on the high thermoelectric performance of p-type polycrystalline BiCuSeO, a layered oxyselenide composed of alternating conductive (Cu 2 Se 2 ) 2 À and insulating (Bi 2 O 2 ) 2 þ layers. The electrical transport properties of BiCuSeO materials can be significantly improved by substituting Bi 3 þ with Ca 2 þ . The resulting materials exhibit a large positive Seebeck coefficient of B þ 330 lV K À1 at 300 K, which may be due to the 'natural superlattice' layered structure and the moderate effective mass suggested by both electronic density of states and carrier concentration calculations. After doping with Ca, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of B4.74 lW cm À1 K À2 at 923 K. Moreover, BiCuSeO shows very low thermal conductivity in the temperature range of 300 (B0.9 W m À1 K À1 ) to 923 K (B0.45 W m À1 K À1 ). Such low thermal conductivity values are most likely a result of the weak chemical bonds (Young's modulus, EB76.5 GPa) and the strong anharmonicity of the bonding arrangement (Gruneisen parameter, cB1.5). In addition to increasing the power factor, Ca doping reduces the thermal conductivity of the lattice, as confirmed by both experimental results and Callaway model calculations. The combination of optimized power factor and intrinsically low thermal conductivity results in a high ZT of B0.9 at 923 K for Bi 0.925 Ca 0.075 CuSeO.

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Thermoelectric Materials

Owens‐Baird

Heinrich

Kovnir

2017

Encyclopedia of Inorganic and Bioinorganic Chemistry

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The field of thermoelectric materials has flourished over the last two decades. Significant successes achieved in the development of materials notwithstanding, novel and highly efficient materials are in steep demand due to a wide range of potential and current applications, ranging from wearable electronics to space missions. The main challenge in the improvement of the thermoelectric figure of merit ( zT ) is to optimize the intertwined intrinsic charge and thermal transport properties. High electrical conductivity and thermopower, along with low thermal conductivity, need to be achieved simultaneously to excel the thermoelectric efficiency. In this review, the thermoelectric concepts, basics of transport properties, and strategies for zT optimization are discussed in the first section. In the following sections, the predominate structure types associated with high‐performance bulk thermoelectric materials are discussed in detail: Bi 2 Te 3 , PbTe, TAGS/LAST systems, SnSe, Cu 2− x Se, chalcopyrites, tetrahedrites, clathrates, skutterudites, zinc antimonides, Yb 14 MnSb 11 , Heusler and half‐Heusler intermetallics. The basic crystal structures, the possibilities for doping and substitutions to adjust charge carrier concentration and thermal conductivity, baseline thermoelectric properties, and strategies for efficiency improvement are considered for each structure type. Examples of recent work highlighting these strategies are briefly presented.

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Synthesis and transport property of AgSbTe2 as a promising thermoelectric compound

Cited by 105 publications

References 18 publications

High-performance nanostructured thermoelectric materials

High-performance nanostructured thermoelectric materials

High thermoelectric performance of oxyselenides: intrinsically low thermal conductivity of Ca-doped BiCuSeO

Thermoelectric Materials

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