Synthesis and thermoelectric properties of high-entropy half-Heusler MFe1−xCoxSb (M = equimolar Ti, Zr, Hf, V, Nb, Ta)

Chen, Kan; Zhang, Ruizhi; Bos, J.-W. G.; Reece, Michael J.

doi:10.1016/j.jallcom.2021.162045

Cited by 29 publications

(26 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…CuInSe 2 -based compounds show n-type behavior due to selenium vacancies. 10 However, as mentioned, some compensation mechanism with the copper valence exists to allow for a higher doping amount. 11 Because the lowest electrical resistivity has been obtained by 5% cadmium doping, even higher doping amounts can be investigated to optimize the properties.…”

Section: ■ Discussionmentioning

confidence: 99%

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Sadia,

Lifshitz,

Sebaoun

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Materials based on the chalcopyrite structure can form semiconductors with a wide range of properties. CuInX 2 , where X is S, Se, or Te, can be tuned by doping on sites such as the Cu site or the In site to change the amount of carrier concentration. One use for semiconductors such as CuInX 2 , with a wide array of doping options, is for thermoelectric applications. Thermoelectric materials are materials with the ability to convert thermal energy such as waste heat into useful electrical energy. By correctly doping CuInX 2 , it could allow for a high thermoelectric figure of merit, ZT, to be achieved. In this study, 0, 0.1%, 1%, and 5% Cd or Ni was used to dope on the In site or the Cu site, respectively. All samples showed single phase chalcopyrite structures. CuInS 2 showed n-type behavior throughout the doping range with both Cd and Ni acting as n-type dopants. CuInTe 2 showed p-type behavior throughout the doping range with Cd acting as an electron donor and Ni acting as an electron acceptor. CuInSe 2 showed n-type behavior, which changed to p-type due to both Cd and Ni acting as acceptors. It is possible that higher concentrations of Cd and Ni could still improve the thermoelectric properties of CuInS 2 with a maximum of ZT = 0.1 upon 5% Cd doping and of CuInSe 2 with ZT = 0.27 upon 5% nickel doping. CuInTe 2 was much more efficient with small amounts of Cd improving the ZT from 0.35 to 0.4.

show abstract

Section: ■ Discussionmentioning

confidence: 99%

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Sadia,

Lifshitz,

Sebaoun

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…The minimum lattice thermal conductivity of 2.5 W m −1 K −1 at 873 K was obtained for the x = 0.4 sample, which is a decrease of almost 55% compared to that of the undoped one. Chen et al 27 investigated the thermoelectric properties of MFe 1− x Co x Sb (M = Ti, Zr, Hf, V, Nb, Ta; equimolar) alloys, and it is shown that the addition of the equimolar elements can contribute to the formation of a single-phase solid solution. In addition, owing to the enhanced probabilities of phonon scattering, an extremely low level of lattice thermal conductivity of ∼1.8 to 1.5 W m −1 K −1 over 323 K to 924 K is reached for MCoSb.…”

Section: Introductionmentioning

confidence: 99%

Ultralow lattice thermal conductivity and improved thermoelectric performance in a Hf-free half-Heusler compound modulated by entropy engineering

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Recently, entropy engineering has been performed to lower κ, e.g., entropy engineering of the Nb site in NbCoSb by equimolar additions of Ti, V, Hf, Ta, and Zr enhanced the ZT to 0.31 at 923 K . The lower lattice thermal conductivity (κ l ) due to lattice distortion and an improvement of the power factor due to high crystal symmetry make high-entropy alloys (HEAs) prospective TE materials .…”

Section: Introductionmentioning

confidence: 99%

Low-Lattice Thermal Conductivity in Zr-Doped Ti₂NiCoSnSb Thermoelectric Double Half-Heusler Alloys

Mishra

Tan

Trivedi

et al. 2023

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

The effect of doping on the thermoelectric properties of Half-Heusler (HH) high-entropy alloy (HEA) Ti2NiCoSnSb was studied. Lower thermal conductivity was observed with increased Sb doping. Mass scattering by heavy (Ta, Zr) and light (Al) dopants was studied to further lower the thermal conductivity. Dopants at the level of up to 50% at the Ti site were studied. A high HH phase content was obtained in the Zr-doped samples, and a low-lattice thermal conductivity of 1.9 W/(m·K) was observed. This value is one of the lowest reported lattice thermal conductivities in HH alloys. The poor solubility of Ta led to undissolved Ta in the samples, which enhanced the electrical properties. In the case of Al doping, the NiAl phase raised the power factor value of Ti1.8Al0.2NiCoSn0.5Sb1.5 to 2.2 × 10–3 W/(m·K2), which is almost twice the corresponding value reported for Ti2NiCoSnSb. Interestingly, a maximum ZT of 0.29 was found in all of the doped systems, although the transport mechanism and microstructure varied widely with the type of dopant. An optimum dopant level of 25% of Zr, 7.5% of Ta, and 10% of Al is necessary to obtain the maximum ZT in these alloys. Compared to HH systems, the HH high-entropy alloy (HEA) systems provide a larger composition field for tuning the transport properties by simultaneous doping of multiple elements to lower the thermal conductivity.

show abstract

Synthesis and thermoelectric properties of high-entropy half-Heusler MFe1−xCoxSb (M = equimolar Ti, Zr, Hf, V, Nb, Ta)

Cited by 29 publications

References 45 publications

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Ultralow lattice thermal conductivity and improved thermoelectric performance in a Hf-free half-Heusler compound modulated by entropy engineering

Low-Lattice Thermal Conductivity in Zr-Doped Ti₂NiCoSnSb Thermoelectric Double Half-Heusler Alloys

Contact Info

Product

Resources

About

Synthesis and thermoelectric properties of high-entropy half-Heusler MFe1−xCoxSb (M = equimolar Ti, Zr, Hf, V, Nb, Ta)

Cited by 29 publications

References 45 publications

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)2-Based Semiconductors

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)2-Based Semiconductors

Ultralow lattice thermal conductivity and improved thermoelectric performance in a Hf-free half-Heusler compound modulated by entropy engineering

Low-Lattice Thermal Conductivity in Zr-Doped Ti2NiCoSnSb Thermoelectric Double Half-Heusler Alloys

Contact Info

Product

Resources

About

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Low-Lattice Thermal Conductivity in Zr-Doped Ti₂NiCoSnSb Thermoelectric Double Half-Heusler Alloys