Synthesis and Thermoelectric Properties of Ni-Doped ZrCoSb Half-Heusler Compounds

Abstract

Abstract:The Ni-doped ZrCo 1−x Ni x Sb half-Heusler compounds were prepared by arc-melting and spark plasma sintering technology. X-ray diffraction analysis results showed that all samples were crystallized in a half-Heusler phase. Thermoelectric properties of ZrCo 1−x Ni x Sb compounds were measured from room temperature to 850 K. The electrical conductivity and the absolute value of Seebeck coefficient increased with the Ni-doping content increasing due to the Ni substitution at Co. sites. The lattice thermal conductivity of ZrCo 1−x Ni x Sb samples was depressed dramatically because of the acoustic phonon scattering and point defect scattering. The figure of merit of ZrCo 1−x Ni x Sb compounds was improved due to the decreased thermal conductivity and improved power factor. The maximum ZT value of 0.24 was achieved for ZrCo 0.92 Ni 0.08 Sb sample at 850 K.

Band Structure Modification and Mass Fluctuation Effects of Isoelectronic Germanium-Doping on Thermoelectric Properties of ZrNiSn

“…Moreover, the elemental mapping (see Figure ) reveals uniform distribution of constituent elements in both ZrNiSn and ZrNiSn 0.97 Ge 0.03 HHs throughout the sample. This is in line with the previous reports for single phase half-Heusler alloys. ,, …”

“…This is in line with the previous reports for single phase half-Heusler alloys. 27,50,51 To further investigate the microstructural features, a representative HH sample with composition ZrNiSn 0.97 Ge 0.03 was studied by HRTEM imaging and selected area electron diffraction (SAED) as shown in Figure 3. In Figure 3a, the lattice planes corresponding to the HH phase are well-indexed with respect to d-spacing.…”

High Thermoelectric Performance in n-Type Degenerate ZrNiSn-Based Half-Heusler Alloys Driven by Enhanced Weighted Mobility and Lattice Anharmonicity

“…μ H was also found to be higher in all the Nb-substituted samples compared to their pristine counterpart. This behavior is quite similar to Sb-doped ZrNiSn reported by Xie et al Further, a similar kind of simultaneous increasing behavior of n H and μ H has also been observed with increasing Nb doping in (Hf, Zr)­CoSb-based compounds and Ni doping in ZrCoSb …”

First-principles calculations to investigate mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP

“…Furthermore, the optical conductivity and hence electrical conductivity of the material increases as a result of photon absorption. The maximum value of optical conductivity, in the visible region, is of 5.4×10 3 (ohm-cm) -1 along a-axis and 4.4×10 3 (ohm-cm) -1 along c-axis. Energy-loss function is an important optical parameter which describes possible interactions of a material by fast moving electrons.…”

“…Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution [2]. Nowadays the half-Heusler (HH) compounds have been attracted intense attention in the field of the condensed matter physics community due to their desirable characteristics, such as excellent mechanical robustness, good thermoelectric performance, high-temperature stability and low toxicity [3]. These compounds have potential application in spintronics (spin transport of electrons) and the green energyrelated fields, such as solar cells or thermoelectrics (TE) [4].…”