Synthesis and thermochemistry of relaxor ferroelectrics in the lead magnesium niobate–lead titanate (PMN–PT) solid solutions series

Costa, Gustavo; Wu, Lili; Navrotsky, Alexandra

doi:10.1039/c0jm03090b

Cited by 7 publications

(2 citation statements)

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“…3,4 ABO 3 perovskites have been shown to exhibit many properties that are useful for, e.g., grain boundary layer capacitors, varistors, electro-optics, ferroelectrics with high dielectric constants, piezoelectrics, high temperature superconductors, ferromagnets, as well as frequency doubling and high memory capacity device applications. [5][6][7][8] Complex composition perovskites, with mixed site occupancies, such as PbZr 1−x Ti x O 3 (PZT), 9,10 PbZr 1/3 Nb 2/3 O 3 (PZN), 11 Pb(Mg 1/3 Nb 2/3 ) 1−x Ti x O 3 (PMN-PT) 12 and Ba 1−x Sr x TiO 3 13 are materials which have been shown to display ferroelectric and relaxor ferroelectric behaviour. 14,15 Ferroelectric materials show maximised dielectric constants just below their high temperature phase transitions as well as at morphotropic phase boundaries.…”

Section: Introductionmentioning

confidence: 99%

Tailoring phase transition temperatures in perovskites via A-site vacancy generation

et al. 2017

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The structures across the SrTiZrNbO, 0 ≤ x ≤ 0.6, defect perovskite series were investigated using complementary synchrotron X-ray and neutron powder diffraction data. The locations of second order compositional and temperature dependent phase transitions between the high symmetry cubic Pm3[combining macron]m phase and the lower symmetry tetragonal I4/mcm phase were determined. Deviation of the oxygen x coordinate from the high symmetry value and the B-O-B bond angle from 180° as well as the tetragonal strain squared were each found to be suitable order parameters to monitor the transitions. Tolerance factor calculations confirmed that these A-site deficient perovskites retain a higher symmetry to a lower value than their fully occupied counterparts. Therefore, adjusting vacancy concentrations can be employed as a general strategy to design compounds with specifically tailored phase transition temperatures.

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Section: Introductionmentioning

confidence: 99%

Tailoring phase transition temperatures in perovskites via A-site vacancy generation

et al. 2017

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“…The growth of pure perovskite PMNT thin films, however, is known to be quite difficult due to the relatively poor thermodynamic stability relative to the pyrochlore phase and due to the compositional complexity along with the high volatility of lead element. [8][9][10][11][12] It is widely accepted that the introduction of an effective buffer or seed layer, such as TiO 2, 13 PbO, 14 LaNiO 3 15 La 0.5 Sr 0.5 CoO 3 , 16 BaTiO 3 , 17 bilayered Pb(Zr 0.2 Ti 0.8 )O 3 /PbO x , 10 etc., can promote the crystallization of perovskite phase in PMNT thin films. We have previously reported that a Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) buffer layer plays an important role in the enhancement of crystallographic and electrical properties of 0.9PMN-0.1PT thin films that were deposited on Pt/TiO 2 /SiO 2 /Si substrates.…”

Section: Introductionmentioning

confidence: 99%

High permittivity 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor thin films for high-value, wide-temperature capacitor applications

Zhu

Defaÿ

Rhun

et al. 2012

Journal of Applied Physics

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Articles you may be interested inSignificant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping Large enhancement of energy-storage properties of compositional graded (Pb1−xLax)(Zr0.65Ti0.35)O3 relaxor ferroelectric thick films Giant electrocaloric effect in the thin film relaxor ferroelectric 0.9 Pb Mg 1 ∕ 3 Nb 2 ∕ 3 O 3 -0.1 Pb Ti O 3 near room temperature High permittivity 0.9Pb(Mg 1/3 Nb 2/3 )O 3 -0.1PbTiO 3 (PMNT) relaxor thin films with a nearly pure perovskite structure as well as a dense and uniform microstructure have been prepared on Pb(Zr,Ti)O 3 -buffered platinized silicon substrates by sol-gel method. Interestingly, the PMNT thin film exhibits high dielectric permittivity, e r $ 1200, and high dielectric tunability, $70% under a moderate E ¼ 333 kV/cm, over a wide temperature range. These results are explained in terms of a relaxor behavior of the PMNT film. Moreover, the leakage current density of the PMNT thin film is reasonably low, roughly 5.2 Â 10 À6 A/cm 2 at an electric field intensity of 400 kV/cm. As the dc electric field increases, the leakage current mechanism is transformed from ohmic law to Fowler-Nordheim tunneling mechanism. All the results obtained indicate that the PMNT relaxor thin film is a good candidate for high-value, wide-temperature capacitor applications. V C 2012 American Institute of Physics. [http://dx.

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Pyrochlore and Perovskite Potassium Tantalate: Enthalpies of Formation and Phase Transformation

Złotnik

Sahu

Navrotsky

et al. 2015

Chemistry A European J

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Alkali niobates and tantalates are currently important lead-free functional oxides. The formation and decomposition energetics of potassium tantalum oxide compounds (K2 O-Ta2 O5 ) were measured by high-temperature oxide melt solution calorimetry. The enthalpies of formation from oxides of KTaO3 perovskite and defect pyrochlores with K/Ta ratio of less than 1 stoichiometry-K0.873 Ta2.226 O6 , K1.128 Ta2.175 O6 , and K1.291 Ta2.142 O6 -were experimentally determined, and the values are (-203.63 ± 2.92) kJ mol(-1) for KTaO3 perovskite, and (-339.54 ± 5.03) kJ mol(-1) , (-369.71 ± 4.84) kJ mol(-1) , and (-364.78 ± 4.24) kJ mol(-1) , respectively, for non-stoichiometric pyrochlores. That of stoichiometric defect K2 Ta2 O6 pyrochlore, by extrapolation, is (-409.87 ± 6.89) kJ mol(-1) . Thus, the enthalpy of the stoichiometric pyrochlore and perovskite at K/Ta=1 stoichiometry are equal in energy within experimental error. By providing data on the thermodynamic stability of each phase, this work supplies knowledge on the phase-formation process and phase stability within the K2 O-Ta2 O5 system, thus assisting in the synthesis of materials with reproducible properties based on controlled processing. Additionally, the relation of stoichiometric and non-stoichiometric pyrochlore with perovskite structure in potassium tantalum oxide system is discussed.

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Synthesis and thermochemistry of relaxor ferroelectrics in the lead magnesium niobate–lead titanate (PMN–PT) solid solutions series

Cited by 7 publications

References 41 publications

Tailoring phase transition temperatures in perovskites via A-site vacancy generation

Tailoring phase transition temperatures in perovskites via A-site vacancy generation

High permittivity 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 relaxor thin films for high-value, wide-temperature capacitor applications

Pyrochlore and Perovskite Potassium Tantalate: Enthalpies of Formation and Phase Transformation

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