Synthesis and structure of chemically vapour-deposited boron nitride

Matsuda, T.; Uno, Naoki; Nakae, Hiroyuki; Hirai, Toshio

doi:10.1007/bf01145537

Cited by 97 publications

(39 citation statements)

References 30 publications

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“…The present model agrees well with a surface structure of pyramidal pentagonal facets observed by scanning electron micrographs in the previous work. 16) Atomic structure models of the BN nanohorn with stacking structures are shown in Fig. 3(c) and 3(d).…”

Section: Resultsmentioning

confidence: 99%

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Growth of Boron Nitride Nanohorn Structures

2008

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Section: Resultsmentioning

confidence: 99%

“…16,17) These BN plates were thinned to 100 mm in thickness with emery papers, and then punched into discs of 2.3 mm diameter with a supersonic wave cutter. The discs were polished with a dimple grinder to less than 50 mm in thickness, and thinned by argon ionmilling at an accelerating voltage of 3-5 kV.…”

Section: Methodsmentioning

confidence: 99%

Growth of Boron Nitride Nanohorn Structures

2008

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“…[11] Low-temperature deposition is of great interest since it extends the applicability of thin films to, e.g., temperature-sensitive substrates. ALD is a process in which the gas-phase reactants are introduced into the reactor in separate pulses with intermediate purging sequences.…”

Section: Introductionmentioning

confidence: 99%

Laser‐Assisted Atomic Layer Deposition of Boron Nitride Thin Films

Olander

Ottosson

Heszler

et al. 2005

Chemical Vapor Deposition

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Boron nitride thin films have been grown by both laser-assisted, and conventional atomic layer deposition (LALD/ALD) at temperatures in the range 250±750 C. Both the NH 3 and BBr 3 precursors were appreciably dissociated by the ArF excimer laser, and up to 600 C, the growth rate was 100 % higher for the LALD process than for ALD. The films consisted of hydrogenterminated turbostratic BN grains. H 2 was theoretically found to bind as strongly as BBr X and NH X (X = 0±2) to hBN(100) edges. The fresh films were stoichiometric with respect to B and N, and contained low degrees of contamination, but oxidized easily in air.

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“…Diborane and ammonia have been commonly used to produce BN [5]. The B 2 H 6 and NH 3 were separately introduced into the reactor and mixed just above the susceptor to avoid their parasitic gas phase reaction at room temperature [6]. A GaN buffer layer with 20-30 nm thickness was grown at 565 °C and ramped to 950 °C for crystallization.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of B_xGa_1−xN on 6H-SiC (0001) by Movpe

Wei

Xie

Edgar

et al. 1999

MRS Internet j. nitride semicond. res.

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Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. B x Ga 1-x N films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and B x Ga 1-x N alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no B x Ga 1-x N was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of B x Ga 1-x N varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

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Synthesis and structure of chemically vapour-deposited boron nitride

Cited by 97 publications

References 30 publications

Growth of Boron Nitride Nanohorn Structures

Growth of Boron Nitride Nanohorn Structures

Laser‐Assisted Atomic Layer Deposition of Boron Nitride Thin Films

Growth and Characterization of B_xGa_1−xN on 6H-SiC (0001) by Movpe

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Synthesis and structure of chemically vapour-deposited boron nitride

Cited by 97 publications

References 30 publications

Growth of Boron Nitride Nanohorn Structures

Growth of Boron Nitride Nanohorn Structures

Laser‐Assisted Atomic Layer Deposition of Boron Nitride Thin Films

Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

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Product

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Growth and Characterization of B_xGa_1−xN on 6H-SiC (0001) by Movpe