2009
DOI: 10.1016/j.jcrysgro.2009.01.130
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Synthesis and structural characterization of highly 〈100〉-oriented {100}-faceted nanocrystalline diamond films by microwave plasma chemical vapor deposition

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Cited by 12 publications
(11 citation statements)
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References 41 publications
(60 reference statements)
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“…This rate is comparable with the reported in the literature [171,186] for similar parameters (4% methane and 800°C deposition temperature). Higher growth rates using MPCVD can be generally achieved by increasing the methane concentration (up to 7.2%) [171].…”
Section: Resultssupporting
confidence: 91%
“…This rate is comparable with the reported in the literature [171,186] for similar parameters (4% methane and 800°C deposition temperature). Higher growth rates using MPCVD can be generally achieved by increasing the methane concentration (up to 7.2%) [171].…”
Section: Resultssupporting
confidence: 91%
“…For micrometerthick columnar-structured films with a diameter of the cylindrical microstructure below 60 nm, it was shown that the lateral grain size of the h100i-oriented columns essentially did not increase with film thickness and the (100)-faceted films had a root-mean-square (rms) roughness of only $15 nm. 65 Typically, the roughness is 50-100 nm rms for NCD films. UNCD diamond with low surface roughness can also be deposited with the argon-rich CH 4 /Ar plasma chemistry, using very small quantities of hydrogen.…”
Section: E Nanocrystalline Diamondmentioning
confidence: 99%
“…presented that the NCD film was synthesized using CH 4 /H 2 /O 2 /N 2 as the gas precursor with high growth rate of 2.6 μm/h [52]. The process used high microwave power of 3 kW and the substrate temperature at 700˚C.…”
Section: Microwave Plasma Chemical Vapor Depositionmentioning
confidence: 99%