Synthesis and structural characterization of microcrystalline Ga2S3 layers on a GaP semiconductor substrate

Jastrzębski, Cezariusz; Jastrzebski, Daniel; Kozak, Vitali; Piętak, Karolina; Wierzbicki, M.; Gȩbicki, W.

doi:10.1016/j.mssp.2019.01.029

Cited by 16 publications

(16 citation statements)

References 28 publications

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“…Raman peaks characteristics for obtained Ga 2 S 3 nanosheets are well matched with various internal and external vibrations modes of GaS 4 tetrahedra, Figure 2d. [ 26,29 ] The Raman peaks at frequencies of 122, 152, 238, 330, and 394 cm −1 can be observed, which can be assigned to the stretching modes and bending modes of tetrahedra. Due to these Raman characteristic peaks have small differences with the cubic phase and the monoclinic phase Ga 2 S 3 reported in previous literatures, [ 26,40 ] which are listed in Table S1 in the Supporting Information, it is difficult to identify the crystal phase accurately.…”

Section: Resultsmentioning

confidence: 99%

“…[ 29 ] Thus, it was believed that hexagonal phase α‐Ga 2 S 3 could be formed at high temperature. [ 26 ]…”

Section: Methodsmentioning

confidence: 99%

“…[ 23,24 ] Ultrathin α‐Ga 2 S 3 nanosheet has a similar configuration as other layered structure, in which S and Ga layers are arranged alternately to form a planar fivefold layer. [ 25,26 ] α‐Ga 2 S 3 possesses a wide bandgap of ≈3.4 eV and has excellent optical absorption properties, [ 24,27 ] giving it great potential for optical and optoelectronic applications, e.g., UV sensor and photovoltaic cell devices. [ 28 ] It has been also revealed that Ga 2 S 3 has a large second‐harmonic generation efficiency, which is ideally desired for nonlinear optical applications.…”

Section: Introductionmentioning

confidence: 99%

“…[ 25 ] Moreover, the low‐cost, non‐toxic, and environmentally friendly characteristics of Ga 2 S 3 should be emphasized as well. [ 26 ] Therefore, the 2D layered structure, inherent wide bandgap semiconducting characteristics and superior optoelectronic properties make α‐Ga 2 S 3 nanosheet attractive in next‐generation nano optoelectronics. Up to now, most researchers have reported on thick α‐Ga 2 S 3 crystals by thermal evaporation technique, [ 29,30 ] and sulfurization method.…”

Section: Introductionmentioning

confidence: 99%

“…Up to now, most researchers have reported on thick α‐Ga 2 S 3 crystals by thermal evaporation technique, [ 29,30 ] and sulfurization method. [ 26 ] Few reports of ultrathin α‐Ga 2 S 3 nanosheets are available. The ultrathin nanosheets obtained by past methods are usually faced with issues of small size, poor material quality and poor uniformity of thickness and morphology.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

Zheng

Tang

Wang

et al. 2020

Adv Funct Materials

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Following the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D α‐Ga2S3 as an important member of group IIIA–VIA semiconductors has outstanding optoelectronic properties. However, the controllable large‐size synthesis of ultrathin α‐Ga2S3 nanosheets still remains a huge challenge. In this paper, a large‐size ultrathin nanosheets of hexagonal Ga2S3 is prepared via an improved chemical vapor deposition method. High‐performance photodetectors based on the ultrathin Ga2S3 nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W−1/1.4 × 1012 Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga2S3 nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next‐generation nanoscale smart optoelectronics.

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Section: Resultsmentioning

confidence: 99%

“…[ 29 ] Thus, it was believed that hexagonal phase α‐Ga 2 S 3 could be formed at high temperature. [ 26 ]…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

Zheng

Tang

Wang

et al. 2020

Adv Funct Materials

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Wearable Sensors Based on Atomically Thin P‐Type Semiconductors

Jiang

Zhang

2023

Adv Materials Technologies

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Abstract2D materials have exceptional physical and chemical characteristics, which makes them attractive for wearable technology. These characteristics include high carrier mobility, outstanding mechanical performance, abundant chemistry, and excellent electrostatic tunability. However, due to the high electron doping effect of interfacial charge impurities and intrinsic defects, most reported 2D materials are n‐type. Complementary electronic devices and high‐performance wearable sensors necessitate the development of p‐type 2D semiconductors, which have superior electrocatalytic performance in oxidative processes compared to their n‐type counterparts. This review paper thoroughly accounts for recent advancements in 2D p‐type semiconductor‐based wearable sensors, covering basic understandings, synthesis and fabrication, functional devices, and sensor performance insights. Finally, challenges and future opportunities for 2D p‐type semiconductor‐based wearable sensors are discussed.

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The Study of Optical Properties of III₂–VI₃ Defect Semiconductor Group Compounds Ga₂S₃, Ga₂Se₃, In₂S₃, and In₂Se₃

Lai

Chuang

et al. 2021

Advanced Photonics Research

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Herein, high‐quality III2VI3 (III = Ga, In and VI = S, Se) single crystals are successfully grown by a chemical vapor transport method. X‐ray diffraction and Raman spectroscopy verify crystal structure, crystalline state, and vibration modes of the as‐grown III2VI3 crystals. According to the structure characterization, Ga2S3 is crystallized in a monoclinic structure, whereas Ga2Se3 belongs to the cubic zincblende phase. The crystal structure of In2S3 is tetragonal, whereas that of In2Se3 may come from a hexagonal layered structure. The four crystal structures are the most stable phases crystallized in Ga2S3, Ga2Se3, In2S3, and In2Se3, respectively. All the mostly stable phase in each of Ga2S3, Ga2Se3, In2S3, and In2Se3 is different and changing. This result identifies the crystalline nature of the III–VI group defect crystals. Modulated thermoreflectance (TR) and optical transmission measurements of the series III2VI3 compounds are, respectively, implemented. The results indicate that all defective Ga2S3, Ga2Se3, In2S3, and In2Se3 crystals are direct semiconductors. Photoluminescence of Ga2S3 and photoconductivity of the Ga2Se3, In2S3, and In2Se3 defect compounds are, respectively, carried out, and the experimental results are demonstrated and analyzed herein.

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Synthesis and structural characterization of microcrystalline Ga2S3 layers on a GaP semiconductor substrate

Cited by 16 publications

References 28 publications

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

Wearable Sensors Based on Atomically Thin P‐Type Semiconductors

The Study of Optical Properties of III₂–VI₃ Defect Semiconductor Group Compounds Ga₂S₃, Ga₂Se₃, In₂S₃, and In₂Se₃

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Synthesis and structural characterization of microcrystalline Ga2S3 layers on a GaP semiconductor substrate

Cited by 16 publications

References 28 publications

Large‐Size Ultrathin α‐Ga2S3 Nanosheets toward High‐Performance Photodetection

Large‐Size Ultrathin α‐Ga2S3 Nanosheets toward High‐Performance Photodetection

Wearable Sensors Based on Atomically Thin P‐Type Semiconductors

The Study of Optical Properties of III2–VI3 Defect Semiconductor Group Compounds Ga2S3, Ga2Se3, In2S3, and In2Se3

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Product

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Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

Large‐Size Ultrathin α‐Ga₂S₃ Nanosheets toward High‐Performance Photodetection

The Study of Optical Properties of III₂–VI₃ Defect Semiconductor Group Compounds Ga₂S₃, Ga₂Se₃, In₂S₃, and In₂Se₃