Synthesis and Raman spectroscopic study of W<sub>20</sub>O<sub>58</sub>nanowires

Chen, Jian; Lu, Dongyu; Zhang, Weihong; Xie, Fangyan; Zhou, Jun; Gong, L.; Deng, Shaozhi; Xu, Ning

doi:10.1088/0022-3727/41/11/115305

Cited by 27 publications

(18 citation statements)

References 16 publications

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“…As shown in Figure D, there are ten characteristic peaks existing in the Raman spectrum, which respectively locates at 78, 126, 172, 189, 288, 333, 347, 604, 622, and 783 cm −1 for these two samples. Meanwhile, the characteristic Raman peaks of them coincide with each other, which also matches previous results well . These Raman peaks are, respectively, attributed to the W–O–W bending mode and stretching mode of the WO 2 .…”

Section: Resultssupporting

confidence: 89%

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Low‐Temperature Fabrication of Cold Cathode WO₂ Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Tian

Yang

Guo

et al. 2017

Adv Materials Technologies

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nanowires exhibited the most excellent FE properties due to their high conductivity. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] On the other hand, for applications in large-area cold-cathode devices, such as X-ray source and flat panel display, glass substrate is preferred due to its low-cost and transparency. However, at present it is a great challenge to grow the WO 2 nanowire arrays on glass substrate at low temperature, although such an issue has been resolved using the Si substrate. [9] Furthermore, whether the WO 2 nanowire arrays grown on glass substrate still maintain comparable emission performances with those on Si substrate is still unknown.In the present study, we report a lowtemperature technique for facilely growing of the WO 2 nanowire cold-cathode arrays on the glass substrate. The field-emission performances of the arrays were scrutinized to unveil their potentials in coldcathode device applications. We managed to reveal the pivotal factors that affected their FE behaviors, whereby the FE performances of the nanowire cold arrays can be strongly improved by finely adjusting the fabrication procedures.

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Section: Resultssupporting

confidence: 89%

“…Meanwhile, the characteristic Raman peaks of them coincide with each other, which also matches previous results well . These Raman peaks are, respectively, attributed to the W–O–W bending mode and stretching mode of the WO 2 . So it implies that both of the samples on the Si or glass substrates are pure WO 2 crystals.…”

Section: Resultssupporting

confidence: 88%

Low‐Temperature Fabrication of Cold Cathode WO₂ Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Tian

Yang

Guo

et al. 2017

Adv Materials Technologies

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“…The spectra taken at the polarisation along the b axis have fewer peaks in the lattice and bending mode region than when the polarisation is perpendicular to the b axis. Compared to some other Raman spectra of WO 3−x nanomaterials [24,37,38], our spectra show narrower peaks, pointing to a higher degree of crystallinity. When the laser power is increased, the nanotiles oxidize to m-WO 3 [24,37].…”

Section: Discussioncontrasting

confidence: 58%

Synthesis and Characterization of Tungsten Suboxide WnO3n−1 Nanotiles

et al. 2021

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WnO3n−1 nanotiles, with multiple stoichiometries within one nanotile, were synthesized via the chemical vapour transport method. They grow along the [010] crystallographic axis, with the thickness ranging from a few tens to a few hundreds of nm, with the lateral size up to several µm. Distinct surface corrugations, up to a few 10 nm deep appear during growth. The {102}r crystallographic shear planes indicate the WnO3n−1 stoichiometries. Within a single nanotile, six stoichiometries were detected, namely W16O47 (WO2.938), W15O44 (WO2.933), W14O41 (WO2.928), W13O38 (WO2.923), W12O35 (WO2.917), and W11O32 (WO2.909), with the last three never being reported before. The existence of oxygen vacancies within the crystallographic shear planes resulted in the observed non-zero density of states at the Fermi energy.

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“…[27,45,47] Blue arrow labelled peaks located at 128.8 cm -1 and 135.4 cm -1 were assigned to fully oxidised WO3, while the peaks at 156.1 cm -1 and 301.9 cm -1 were assigned to substoichiometric WO3-x, indicating the presence of oxygen vacancies in edge tungsten oxides. [48][49][50][51] It has been widely studied that air-exposure caused significant influence on oxygen deficiency in TMOs. [28,32,52] For example, only one-hour air-exposure led to sharply reduced WF of MoOx accompanied with obviously increased oxygen vacancies, nonetheless our six-month air-exposure.…”

Section: Resultsmentioning

confidence: 99%

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Han

Liu

et al. 2019

Adv Materials Inter

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Transition metal oxides (TMOs) with high work function (WF) show promising properties as unipolar p-type contacts for transition metal dichalcogenides. Here, ambipolar field-effect transistors (FETs) enabled by bilayer WSe2 with self-assembled TMOs (WO2.57) as contacts are reported. Systematic material characterizations demonstrated the formation of WO2.57/WSe2 heterojunctions around nanoflake edges with Se atoms substituted by O atoms after air-exposure, while pristine properties of WSe2 almost sustained in inner domains. As-fabricated FETs exhibited both polarities, implying WO2.57 with lowered WF at edges can serve as both the p-type and n-type contact for inner WSe2. Noteworthy, greatly reduced contact resistance and enhanced channel current were achieved, compared to the devices without WO2.57 contacts. Linear drain-source current relationship from 77 K to 300 K indicated the ohmic contact between edge WO2.57 and inner WSe2. Density functional theory calculations further revealed the WO2.57/WSe2 heterojunction formed a barrier-less charge distribution. These nm-scale FETs possessed remarkable electrical conductivity up to ~ 2600 S/m, ultra-low leakage current down to ~ 10-12 A, robustness for high voltage operation and air stability, which even outperformed pristine WSe2 FETs. Theoretical calculations revealed the high conductivity was exclusively attributed to the air-induced WO2.57 and its further carrier injection to WSe2.

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Synthesis and Raman spectroscopic study of W₂₀O₅₈nanowires

Cited by 27 publications

References 16 publications

Low‐Temperature Fabrication of Cold Cathode WO₂ Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Low‐Temperature Fabrication of Cold Cathode WO₂ Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Synthesis and Characterization of Tungsten Suboxide WnO3n−1 Nanotiles

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

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Synthesis and Raman spectroscopic study of W20O58nanowires

Cited by 27 publications

References 16 publications

Low‐Temperature Fabrication of Cold Cathode WO2 Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Low‐Temperature Fabrication of Cold Cathode WO2 Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Synthesis and Characterization of Tungsten Suboxide WnO3n−1 Nanotiles

Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

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Synthesis and Raman spectroscopic study of W₂₀O₅₈nanowires

Low‐Temperature Fabrication of Cold Cathode WO₂ Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Low‐Temperature Fabrication of Cold Cathode WO₂ Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides