Synthesis and properties of SrFe1 − x M x O3 − z (M = Mo, W) perovskites

Savinskaya, O.A.; Nemudry, A. P.; Lyakhov, N. Z.

doi:10.1134/s0020168507120199

Cited by 33 publications

(12 citation statements)

References 14 publications

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“…This comparative result also rules out the drift of the oxygen ions between the SFO and SRO layers as the major cause for the observed RS; otherwise, RS would depend weakly on the oxygen in the ambient and the electroforming and set would take place at positive voltages. [34,35] Therefore, the electric field-driven vertical oxygen migration may be aided by Joule heating. If the oxygen incorporation (extraction) occurs, the amount of oxygen vacancies will decrease (increase) near the surface, leading to a reduction (enhancement) in the surface potential.…”

mentioning

confidence: 99%

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

Tian

Fan

et al. 2019

Advanced Materials

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Oxygen stoichiometry plays a crucial role in determining the crystalline structure and physical properties of transition metal oxides (TMOs). Tuning the oxygen content via an electrochemical redox reaction can effectively manipulate the functionalities of TMOs, which is harnessed in many cutting-edge energy and information technologies such as fuel cells, [1] rechargeable batteries, [2] supercapacitors, [3] and memory devices. [4] The redox reaction in certain TMOs can be enabled by a so-called topotactic phase transformation, manifesting itself as the insertion/release of a large amount of oxygen ions without breaking the lattice framework. For example, for an ABO 3 perovskite (PV) phase, upon forming ordered oxygen vacancy channels in its lattice, it transforms into an ABO 2.5 brownmillerite (BM) phase. Along with the structural change, many intriguing physical phenomena emerge owing to the couplings between lattice, charge, and Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating brownmillerite (BM) phase and conducting perovskite (PV) phase, has emerged as promising candidate materials for RS memories. Nevertheless, the microscopic mechanism of RS in these TMOs is still unclear. Furthermore, RS devices with simultaneously high density and superior memory performance are yet to be reported. Here, using SrFeO x as a model system, it is directly observed that PV SrFeO 3 nanofilaments are formed and extend almost through the BM SrFeO 2.5 matrix in the ON state and are ruptured in the OFF state, unambiguously revealing a filamentary RS mechanism. The nanofilaments are ≈10 nm in diameter, enabling to downscale Au/ SrFeO x /SrRuO 3 RS devices to the 100 nm range for the first time. These nanodevices exhibit good performance including ON/OFF ratio as high as ≈10 4 , retention time over 10 5 s, and endurance up to 10 7 cycles. This study significantly advances the understanding of the RS mechanism in TMOs exhibiting topotactic phase transformation, and it also demonstrates the potential of these materials for use in high-density RS memories.

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confidence: 99%

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

Tian

Fan

et al. 2019

Advanced Materials

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“…2 and 3b; Table 1). Thus, under 1200 • C heat treatment, some simultaneous and step-bystep solid state chemical reactions are proceeded, thereby forming the one-layered GdSrFeO 4 Ruddlesden-Popper phase and phase structurally related to Gd 2 SrFe 2 O 7 ( Fig. 3b Under 1300-1400 • C of samples heat treatment, as shown in Fig.…”

Section: Resultsmentioning

confidence: 97%

“…Obtaining of complex oxides with perovskite-related structure, including layered perovskite-related compounds, is conjugated with number of synthetic problems [1][2][3][4][5][6][7][8][9][10]. Mentioned previously difficulties are connected with thermal instability and multi-staged formation character of many from considered oxides [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of layered perovskite-related GdSrFeO4 compound solid state synthesis

Тугова

Гусаров

2011

Journal of Alloys and Compounds

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“…This possibility has been successfully demonstrated in works [4][5][6] where substitutions were used of Mo, Nb and Ti for Fe. It has been shown that moderate doping has no significant effect on the ionic conductivity of dopant derivatives.…”

Section: Introductionmentioning

confidence: 94%

The effect of sintering temperature on the performance of IT-SOFC SrFe0.9Sb0.1O3- perovskite oxide

Yu¹,

Li²

2017

Proceedings of the 2017 6th International Conference on Energy and Environmental Protection (ICEEP 2017)

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Abstract. The perovskite cathode material of SrFe 0.9 Sb 0.1 O 3-δ (SFS) was prepared by glycine-nitrate process (GNP). The SFS oxides sintered at 1150，1200 and 1250 ºC for 10 h were crystallized into a single phase perovskite structure, respectively. The effect of sintering temperature on crystal structure, conductivity and polarization resistance was also discussed in detail. The X-ray diffraction and SEM results show that the density increases with the increase of sintering temperature. The results of electrical properties show that the conductivity of SFS samples is dominated by p-type conductivity, and the conduction behavior is in accordance with the mechanism of small polaron jumping. With the rising sintering temperature, the conductivity of prepared samples increases gradually. In the temperature 650−800 ºC, the conductivity values are 57.8−32.5, 63.6−35.8 and 74.5−40.3 S cm −1 for the SFS samples of sintering at 1150, 1200 and 1250 ºC, respectively. The SFS cathode has a good chemical compatibility with the SDC electrolyte at temperatures below 950 °C. The polarization resistances of SFS cathode were 0.064, 0.052 and 0.047 Ω cm 2 at 800 ºC, respectively. The results show that the SFS material of sintering at 1250 °C has promising prospects for the application of IT-SOFCs.

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Synthesis and properties of SrFe1 − x M x O3 − z (M = Mo, W) perovskites

Cited by 33 publications

References 14 publications

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

Peculiarities of layered perovskite-related GdSrFeO4 compound solid state synthesis

The effect of sintering temperature on the performance of IT-SOFC SrFe0.9Sb0.1O3- perovskite oxide

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Synthesis and properties of SrFe1 − x M x O3 − z (M = Mo, W) perovskites

Cited by 33 publications

References 14 publications

Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High‐Density Resistive Switching Memory

Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High‐Density Resistive Switching Memory

Peculiarities of layered perovskite-related GdSrFeO4 compound solid state synthesis

The effect of sintering temperature on the performance of IT-SOFC SrFe0.9Sb0.1O3- perovskite oxide

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Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory