“…In this context, several attempts were made to achieve p-ZnO by (partial) oxidation of Zn 3 N 2 [4][5][6][7][8][9][10][11][12] or by fabricating ZnO:N from Zn 3 N 2 targets, as demonstrated by pulsed laser ablation. 13 This also led to increased research activity on Zn 3 N 2 itself, including first demonstrations of Zn 3 N 2 in the field of thin film transistors (TFTs). [14][15][16][17][18][19][20][21][22] Although some band-gap studies on Zn 3 N 2 estimated values of 2.9-3.4 eV, 14,16,23,24 most of the recent studies and theoretical calculations, including photoluminescence measurements, find values in the 0.8-1.5 eV range.…”