2007
DOI: 10.1557/jmr.2007.0294
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Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target

Abstract: Epitaxial ZnO thin films doped uniformly with nitrogen at 10 20 atoms/cm 3 were fabricated by pulsed laser ablation of a Zn-rich Zn 3 N 2 target. The films grown at 300°C and annealed at 600°C in O 2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10-20 nm columnar grains with a high density of defects a… Show more

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Cited by 11 publications
(6 citation statements)
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“…In this context, several attempts were made to achieve p-ZnO by (partial) oxidation of Zn 3 N 2 [4][5][6][7][8][9][10][11][12] or by fabricating ZnO:N from Zn 3 N 2 targets, as demonstrated by pulsed laser ablation. 13 This also led to increased research activity on Zn 3 N 2 itself, including first demonstrations of Zn 3 N 2 in the field of thin film transistors (TFTs). [14][15][16][17][18][19][20][21][22] Although some band-gap studies on Zn 3 N 2 estimated values of 2.9-3.4 eV, 14,16,23,24 most of the recent studies and theoretical calculations, including photoluminescence measurements, find values in the 0.8-1.5 eV range.…”
Section: Introductionmentioning
confidence: 99%
“…In this context, several attempts were made to achieve p-ZnO by (partial) oxidation of Zn 3 N 2 [4][5][6][7][8][9][10][11][12] or by fabricating ZnO:N from Zn 3 N 2 targets, as demonstrated by pulsed laser ablation. 13 This also led to increased research activity on Zn 3 N 2 itself, including first demonstrations of Zn 3 N 2 in the field of thin film transistors (TFTs). [14][15][16][17][18][19][20][21][22] Although some band-gap studies on Zn 3 N 2 estimated values of 2.9-3.4 eV, 14,16,23,24 most of the recent studies and theoretical calculations, including photoluminescence measurements, find values in the 0.8-1.5 eV range.…”
Section: Introductionmentioning
confidence: 99%
“…Nitrogen has been considered as the best candidate for doping because it has a similar ionic radius as oxygen and also has the smallest ionization energy among the group V elements [11]. There are various methods reported for the preparation of N-doped ZnO nanoparticles, including sol gel method [12], microwave synthesis [13], pulsed laser deposition [14,15], etc. The microemulsion method is an efficient way to synthesize nanosized metal oxides.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, N was commonly regarded as a relatively better choice, which was also confirmed theoretically by Park et al [2]. Recently, many researchers reported the fabrication of p-type nitrogendoped ZnO [3][4][5][6][7][8]. Unfortunately, the quality of the p-type ZnO:N films still remained an obstacle to the development for ZnO.…”
Section: Introductionmentioning
confidence: 88%