Synthesis and properties of AsxTe100−x films prepared by plasma deposition via elemental As and Te

Monolayer AsTe2: Stable Robust Metal in 2D, 1D and 0D

“…As it is clearly seen from Figure 2, 2H-and 1T-AsTe 2 monolayers are dynamically stable because all phonon modes have real eigenfrequencies; thus, it is shown that synthesis of both phases is possible as a free-standing monolayer via bottom-up approaches: chemical vapor deposition and atomic or molecular condensation methods, allowing the As and Te as precursors to grow in size. [43][44][45][46] Furthermore, due to atomic masses, the phonon modes of 2H-AsTe 2 and 1T-AsTe 2 monolayers lie at low frequencies smaller than 200 cm À1 , which indicate that both of them are softer materials than other 2D materials such as MoS 2 , graphene, h-BN. [56][57][58] It is well-known that the soft materials have the low thermal conductivity, namely, the predicted ultra-thin AsTe 2 structures can be utilized as the thermoelectric materials.…”

“…It was shown that ‐As 2 Te 3 has ∼1 W m −1 K −1 thermal conductivity around room temperature which is lower than SiO 2 thin layer ,. Very recently, the PECVD synthesis and optical characterization of As−Te chalcogenide films were successfully done by Mochalov et al . It was found that the degree of transparency and the surface roughness of the deposited films increase with increasing of the Te content.…”

“…[35] Vaney et al reported the thermoelectric characterization of the compound a-As 2 Te 3 between 5 K and 523 K. [38] It was shown that a-As 2 Te 3 has~1 W m À1 K À1 thermal conductivity around room temperature which is lower than SiO 2 thin layer. [41,42] Very recently, the PECVD synthesis and optical characterization of AsÀTe chalcogenide films were successfully done by Mochalov et al [43][44][45][46] It was found that the degree of transparency and the surface roughness of the deposited films increase with increasing of the Te content. Furthermore, the electronic structures and vibrational properties of the layered aphase As 2 Te 3 was studied under compression.…”

Структурная модификация фемтосекундным лазерным излучением пленок халькогенидного стекла As-=SUB=-50-=/SUB=-S-=SUB=-50-=/SUB=-, полученных методом плазмохимического осаждения из газовой фазы-=SUP=-*-=/SUP=-

“…Этот метод позволяет существенно снизить концентрацию примесей. Образец, который использовался в настоящей работе, был изготовлен методом PECVD на установке, подробно описанной в работах [22][23][24][25]. В качестве плазмообразующего газа и газа-носителя использовался аргон [26].…”