Synthesis and photoresponse study of vertically oriented CuO/ZnO nanorod arrays based on solution methods

2D Ti3C2-MXene Nanosheets/ZnO Nanorods for UV Photodetectors

“…ZnO, in contrast to prior generations of semiconductors like Si, germanium (Ge), gallium arsenide (GaAs), and indium antimonide (InSb), exhibits a broad band gap and improved carrier mobility and stability, rendering it a highly attractive material for UV PDs. − Among the various ZnO nanostructures, 1D ZnO arrays have the advantages of large ratios of surface areas to volumes, high breakdown electric field and electron saturation rate, and short efficient pathways for charge carrier transport. − The 1D ZnO arrays PDs still suffer from low photoresponsivity and a long response time (seconds to minutes) because of high carrier recombination rates. , In recent years, inorganic semiconductors (TiO 2 , GaN, , and Si), organic semiconductors (PEDOT and P3HT), two-dimensional nanomaterials (rGO), and other materials are combined with a 1D ZnO nanorods array to form the p–n or n–n heterojunctions or Schottky junctions. The corresponding built-in electric fields can be effectively generated to improve the separation and transportation rate of optical carriers. − There are some challenges that must be addressed, including the high cost and intricate manufacturing procedures of inorganic semiconductors, limited stability, and variable effects of temperature and humidity on the organic semiconductors.…”