Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

Fakhri, Elham; Sultan, M. T.; Manolescu, Andrei; Ingvarsson, Snorri; Plugaru, N.; Plugaru, R.; Svavarsson, H. G.

doi:10.1109/cas52836.2021.9604178

Cited by 4 publications

(3 citation statements)

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“…Among these methods, MACE is the simplest and most versatile one [26]. It relies on catalyzed etching with assistance from a perforated metal template film (typically gold or silver) [27] or randomly distributed metallic nanoparticles (typically gold or silver) [28,29] spread on the Si-wafer. To date, studies have been focused on using different gas types to apply direct pressure on SiNWs, either single SiNW or arrays of SiNWs [19,30], and have neglected the SiNWs response under isostatic pressure, which creates a load uniformly distributed on the sample surface.…”

Section: Introductionmentioning

confidence: 99%

“…The porosity is most conveniently controlled by the concentration of Ag deposition solution and etching time. In a previous study [28], it was demonstrated that the SiNWs porosity was highly affected by the concentration of the AgNO 3 during the Ag deposition. A 1.5 mM AgNO 3 (as used for samples A-D) provided highly porous SiNWs with maximum photoluminescence spectra intensity.…”

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confidence: 96%

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Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Fakhri

Plugaru

Sultan

et al. 2022

Sensors

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Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1m pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure.

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Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 96%

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Fakhri

Plugaru

Sultan

et al. 2022

Sensors

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show abstract

“…In the third step, the etching was terminated by moving the samples to de-ionized water, after which the Ag residual was removed with 60% nitric acid. A full description of the synthesis process can be found in a previous publication [ 33 ]. The top-view and cross-section images of the samples were investigated using a scanning electron microscope (SEM, Zeiss Supra 35), which is presented in Figure 2 .…”

Section: Methodsmentioning

confidence: 99%

Application of p and n-Type Silicon Nanowires as Human Respiratory Sensing Device

Fakhri,

Sultan,

Manolescu

et al. 2023

Sensors

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Accurate and fast breath monitoring is of great importance for various healthcare applications, for example, medical diagnoses, studying sleep apnea, and early detection of physiological disorders. Devices meant for such applications tend to be uncomfortable for the subject (patient) and pricey. Therefore, there is a need for a cost-effective, lightweight, small-dimensional, and non-invasive device whose presence does not interfere with the observed signals. This paper reports on the fabrication of a highly sensitive human respiratory sensor based on silicon nanowires (SiNWs) fabricated by a top-down method of metal-assisted chemical-etching (MACE). Besides other important factors, reducing the final cost of the sensor is of paramount importance. One of the factors that increases the final price of the sensors is using gold (Au) electrodes. Herein, we investigate the sensor’s response using aluminum (Al) electrodes as a cost-effective alternative, considering the fact that the electrode’s work function is crucial in electronic device design, impacting device electronic properties and electron transport efficiency at the electrode–semiconductor interface. Therefore a comparison is made between SiNWs breath sensors made from both p-type and n-type silicon to investigate the effect of the dopant and electrode type on the SiNWs respiratory sensing functionality. A distinct directional variation was observed in the sample’s response with Au and Al electrodes. Finally, performing a qualitative study revealed that the electrical resistance across the SiNWs renders greater sensitivity to breath than to dry air pressure. No definitive research demonstrating the mechanism behind these effects exists, thus prompting our study to investigate the underlying process.

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Semiconductor Nanomaterials

2023

Chemistry of Semiconductors

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The study of the physico-chemical, structural, morphological and optoelectronic properties of nanocrystalline semiconductors prepared in the form of dots, wires and sheets is the aim of this chapter, where the cases of silicon, germanium and ZnO are taken as representative examples. To start, the effect of size and morphology on the thermodynamic and quantum-confined properties of nanocrystalline silicon is considered, also in view of the growth processes carried out from the molten phase, which are considered in full detail. The case of silicon is considered as a paradigmatic example for elemental semiconductors, showing the influence of size on the crystallographic structure and optical properties when prepared as a nanowire, looking to the effects of the different methods used for its preparation as dots, nanowires and films. The case of ZnO is also considered as a paradigmatic case of use of oxide semiconductors as chemical sensors or optical emitters at the nanosize, devoting an extended discussion to its preparation and properties.

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Synthesis and photoluminescence study of silicon nanowires obtained by metal assisted chemical etching

Cited by 4 publications

References 11 publications

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Application of p and n-Type Silicon Nanowires as Human Respiratory Sensing Device

Semiconductor Nanomaterials

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