In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium ͑CIGS͒ nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. Copper indium gallium selenide ͑CIGS͒ compounds are considered among the most efficient absorber materials for solar cell applications because they show relevant advantages, such as high absorption coefficients of visible light ͑up to about 10 5 cm −1 ͒, ability to undergo bandgap engineering through alloy formation, and longterm optoelectronic stability.1,2 For these features, CIGS-based solar cells compete with poly Si-based ones, and considerable efforts have been made to developing innovative devices using these materials. The excellent performance of CIGS compounds was attributed to a hole potential barrier at grain boundaries preventing electron-hole recombination. Despite this, the region could contain many defects. According to Yan et al., 4 the superior performance of CIGS should not be explained exclusively in terms of grain-boundary behavior: They also attributed a key role to the existence of nano p-n junction networks in the entire CIGS film because of the formation of Cupoor and Cu-rich nanodomains that exhibit n-and p-type conductivities, respectively.5 To date, the best performance was obtained by the NREL group: For a single-junction CIGS solar cell ͑laboratory scale device; area: 0.42 cm 2 ͒, a conversion efficiency of more than 20% was achieved.6 This device was fabricated by a process difficult to scale up because it is based on successive deposition steps; in particular, the CIGS absorber film was produced by a three-stage coevaporation process that can severely hinder the diffusion of this device.Conversely, to make CIGS-based solar cells more attractive and competitive, low cost and easy scalability processes must be developed. In this context, electrodeposition can play a key role because it is a very simple and quick technique for obtaining good quality, large-area CIGS films compared with other fabrication methods. 7,8 A further advantage of the electrochemical route is the possibility to form homojunctions of CIGS without changing the electrolyte solution, as shown by Dharmadasa et al., 9 who also evidenced how it is possible to simultaneously control a type of electrical conduction and energy gap ͑from 1.1 to 2.2 eV͒ by changing the applied voltage.The overall reaction leading to the deposition of stoichiometric CIGS is Cu 2+ + In 3+ + Ga 3+ + 2SeO 3 2− + 12H + + 16eThe exact mechanism is not well established because it depends on the redox potential of each species, solution composition, and applied potential. 10 The...